Progress In Modeling Of Fluid Flows In Crystal Growth Processes
文献类型：期刊论文
| 作者 | Chen QS(陈启生) ; Jiang YN(姜燕妮); Yan JY(颜君毅); Qin M(秦明); Chen QS(陈启生); Yan JY(颜君毅); Jiang YN(姜燕妮); Jiang YN(姜燕妮)
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| 刊名 | Progress In Natural Science
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| 出版日期 | 2008 |
| 页码 | 1465-1473 |
| 通讯作者邮箱 | qschen@imech.ac.cn |
| 关键词 | Modeling Crystal Growth Fluid Flow Czochralski Growth Ammonothermal Growth Physical Vapor Transport Transverse Magnetic-Field Physical-Vapor Transport Sic-Bulk Growth Silicon Czochralski Furnace Thermal-Capillary Analysis Radiative Heat-Transfer Sublimation Growth Numerical-Simulation Ammonothermal Growth Oxygen Distribution |
| ISSN号 | 1002-0071 |
| 通讯作者 | Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100190, Peoples R China. |
| 中文摘要 | Modeling of fluid flows in crystal growth processes has become an important research area in theoretical and applied mechanics. Most crystal growth processes involve fluid flows, such as flows in the melt, solution or vapor. Theoretical modeling has played an important role in developing technologies used for growing semiconductor crystals for high performance electronic and optoelectronic devices. The application of devices requires large diameter crystals with a high degree of crystallographic perfection, low defect density and uniform dopant distribution. In this article, the flow models developed in modeling of the crystal growth processes such as Czochralski, ammonothermal and physical vapor transport methods are reviewed. In the Czochralski growth modeling, the flow models for thermocapillary flow, turbulent flow and MHD flow have been developed. In the ammonothermal growth modeling, the buoyancy and porous media flow models have been developed based on a single-domain and continuum approach for the composite fluid-porous layer systems. In the physical vapor transport growth modeling, the Stefan flow model has been proposed based on the flow-kinetics theory for the vapor growth. In addition, perspectives for future studies on crystal growth modeling are proposed. (c) 2008 National Natural Science Foundation of China and Chinese Academy of Sciences. Published by Elsevier Limited and Science in China Press. All rights reserved. |
| 类目[WOS] | Materials Science, Multidisciplinary ; Multidisciplinary Sciences |
| 研究领域[WOS] | Materials Science ; Science & Technology - Other Topics |
| 关键词[WOS] | TRANSVERSE MAGNETIC-FIELD ; PHYSICAL-VAPOR TRANSPORT ; SIC-BULK GROWTH ; SILICON CZOCHRALSKI FURNACE ; THERMAL-CAPILLARY ANALYSIS ; RADIATIVE HEAT-TRANSFER ; SUBLIMATION GROWTH ; AMMONOTHERMAL GROWTH ; NUMERICAL-SIMULATION ; TEMPERATURE DISTRIBUTION |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000262137300002 |
| 公开日期 | 2009-08-03 ; 2009-09-14 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/25772]  |
| 专题 | 力学研究所_力学所知识产出(1956-2008) |
| 通讯作者 | Chen QS(陈启生) |
| 推荐引用方式 GB/T 7714 | Chen QS,Jiang YN,Yan JY,et al. Progress In Modeling Of Fluid Flows In Crystal Growth Processes[J]. Progress In Natural Science,2008:1465-1473. |
| APA | 陈启生.,姜燕妮.,颜君毅.,秦明.,Chen QS.,...&Jiang YN.(2008).Progress In Modeling Of Fluid Flows In Crystal Growth Processes.Progress In Natural Science,1465-1473. |
| MLA | 陈启生,et al."Progress In Modeling Of Fluid Flows In Crystal Growth Processes".Progress In Natural Science (2008):1465-1473. |
入库方式： OAI收割
来源：力学研究所
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