Phase change memory based on ge(2)sb(2)te(5) capped between polygermanium layers
文献类型：期刊论文
| 作者 | Zhang, Ting1,2; Song, Zhitang1; Gong, Yuefeng1,2; Lin, Yun1; Xu, Cheng1,2; Chen, Yifeng1,2; Liu, Bo1; Feng, Songlin1 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2008-03-17 |
| 卷号 | 92期号:11页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2898216 |
| 通讯作者 | Zhang, ting(tzhang@mail.sim.ac.cn) |
| 英文摘要 | The effects of polygermanium interlayer, acting mainly as heating and thermal-resisting one, on performance of phase change memory are studied. thermal simulation shows that the maximum temperature in ge(2)sb(2)te(5) layer is remarkably promoted when ge(2)sb(2)te(5) is capped between polygermanium layers. the maximum temperature location moves closer to the interface between ge(2)sb(2)te(5) and tungsten plug, significantly avoiding the parallel resistance in the reset state, which makes the memory more reliable. electrical measurement shows that the polygermanium capped structure has a much lower reset current and larger resistance contrast compared to the one without polygermanium layers. (c) 2008 american institute of physics. |
| WOS关键词 | RANDOM-ACCESS MEMORY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000254292400106 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2388608 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Zhang, Ting |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nantechnol, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Ting,Song, Zhitang,Gong, Yuefeng,et al. Phase change memory based on ge(2)sb(2)te(5) capped between polygermanium layers[J]. Applied physics letters,2008,92(11):3. |
| APA | Zhang, Ting.,Song, Zhitang.,Gong, Yuefeng.,Lin, Yun.,Xu, Cheng.,...&Feng, Songlin.(2008).Phase change memory based on ge(2)sb(2)te(5) capped between polygermanium layers.Applied physics letters,92(11),3. |
| MLA | Zhang, Ting,et al."Phase change memory based on ge(2)sb(2)te(5) capped between polygermanium layers".Applied physics letters 92.11(2008):3. |
入库方式： iSwitch采集
来源：中国科学院大学
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。