中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Ultra-low resistance at TTF-TCNQ organic interfaces

文献类型:期刊论文

作者Wen, Shuhao; Deng, Wei-Qiao; Han, Ke-Li
刊名chemical communications
出版日期2010
卷号46期号:28页码:5133-5135
ISSN号1359-7345
产权排序1;1
通讯作者邓伟侨 ; 韩克利
英文摘要we have investigated the conduction mechanism at the ttf-tcnq organic hetero-interface by means of quantum mechanical (qm) calculations. the calculated resistances at the ttf-tcnq interface are 39-64 k omega per square, which is in good agreement with the experimental values of 1-30 k omega per square.
WOS标题词science & technology ; physical sciences
类目[WOS]chemistry, multidisciplinary
研究领域[WOS]chemistry
关键词[WOS]charge-transport ; molecular structure ; hole mobilities ; semiconductors ; crystal
收录类别SCI
原文出处false
语种英语
WOS记录号WOS:000279565500026
公开日期2010-11-30
源URL[http://159.226.238.44/handle/321008/103395]  
专题大连化学物理研究所_中国科学院大连化学物理研究所
作者单位Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China
推荐引用方式
GB/T 7714
Wen, Shuhao,Deng, Wei-Qiao,Han, Ke-Li. Ultra-low resistance at TTF-TCNQ organic interfaces[J]. chemical communications,2010,46(28):5133-5135.
APA Wen, Shuhao,Deng, Wei-Qiao,&Han, Ke-Li.(2010).Ultra-low resistance at TTF-TCNQ organic interfaces.chemical communications,46(28),5133-5135.
MLA Wen, Shuhao,et al."Ultra-low resistance at TTF-TCNQ organic interfaces".chemical communications 46.28(2010):5133-5135.

入库方式: OAI收割

来源:大连化学物理研究所

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