Growth and characterization of na0.5bi0.5tio3-batio3 lead-free piezoelectric crystal by the tssg method
文献类型：期刊论文
| 作者 | Ge, Wenwei1,2,3; Liu, Hong4; Zhao, Xiangyong1,2; Pan, Xiaoming1,2; He, Tianhou1,2; Lin, Di1,2; Xu, Haiqing1,2; Luo, Haosu1,2 |
| 刊名 | Journal of alloys and compounds
 |
| 出版日期 | 2008-05-29 |
| 卷号 | 456期号:1-2页码:503-507 |
| 关键词 | Ferroelectrics Crystal growth X-ray diffraction Dielectric response Piezoelectricity |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2007.02.120 |
| 通讯作者 | Ge, wenwei(wenweige@hotmail.com) |
| 英文摘要 | In this paper, polycrystalline material of 0.94na(0.5)bi(0.5)tio(3)-0.06batio(3) (abbreviated as nbbt94/6) was synthesized by solid-state reaction techniques. dta and tg analysis indicate the proper temperature for solid-state reaction is 1200 degrees c. a single crystal with dimensions of 25 turn x 10 mm was successfully grown by using the top-seeded solution growth (tssg) method. x-ray fluorescence analysis revealed that the composition of the as-grown crystal is nbbt98/2. x-ray powder diffraction results show that the as-grown nbbt98/2 crystal possesses the perovskite structure and belongs to the rhombohedral system. the unit-cell constants of the as-grown nbbt98/2 crystal are a = b = c = 3.8862 angstrom and alpha = beta = gamma = 89.2 degrees. at room temperature, the dielectric constant of (001) oriented nbbt98/2 crystal is 770 at 10 khz and it decreases to 430 after poling under the e-field of 7 kv/mm. maximum d(33) values of 60, 65 and 30 pc/n were obtained for (001), (110) and (111) oriented nbbt98/2 crystal, respectively. (c) 2007 elsevier b.v. all rights reserved. |
| WOS关键词 | SODIUM-BISMUTH TITANATE ; ELECTRICAL-PROPERTIES ; PHASE-TRANSITIONS ; SINGLE-CRYSTAL ; CERAMICS ; SYSTEM ; (NA1/2BI1/2)TIO3 ; BEHAVIOR ; PECULIARITIES |
| WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000255510900087 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2390260 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Ge, Wenwei |
| 作者单位 | 1.Chinese Acad Sci, State Key Lab High Performance Ceram & Superfine, Shanghai Inst Ceram, Shanghai 201800, Peoples R China 2.Chinese Acad Sci, R&D Ctr Crystal, Shanghai Inst Ceram, Shanghai 201800, Peoples R China 3.Chinese Acad Sci, Grad Sch, Beijing 10039, Peoples R China 4.Jingdezhen Ceram Inst, Jingdezhen 333001, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ge, Wenwei,Liu, Hong,Zhao, Xiangyong,et al. Growth and characterization of na0.5bi0.5tio3-batio3 lead-free piezoelectric crystal by the tssg method[J]. Journal of alloys and compounds,2008,456(1-2):503-507. |
| APA | Ge, Wenwei.,Liu, Hong.,Zhao, Xiangyong.,Pan, Xiaoming.,He, Tianhou.,...&Luo, Haosu.(2008).Growth and characterization of na0.5bi0.5tio3-batio3 lead-free piezoelectric crystal by the tssg method.Journal of alloys and compounds,456(1-2),503-507. |
| MLA | Ge, Wenwei,et al."Growth and characterization of na0.5bi0.5tio3-batio3 lead-free piezoelectric crystal by the tssg method".Journal of alloys and compounds 456.1-2(2008):503-507. |
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