Spice model for ldd structure cmos device at 35k
文献类型：期刊论文
| 作者 | Liu Wen-Yong1,2; Ding Rui-Jun1; Feng Qi1 |
| 刊名 | Journal of infrared and millimeter waves
 |
| 出版日期 | 2008-12-01 |
| 卷号 | 27期号:6页码:465-469 |
| 关键词 | Lightly doped drain(ldd) Series resistance Bsim3v3 Spice model Cmos Low temperature |
| ISSN号 | 1001-9014 |
| 通讯作者 | Liu wen-yong() |
| 英文摘要 | Since the abnormal series resistance caused by ldd structure for cmos device at 35k temperature could not be simulated by bsim3v3 model, new macro models were introduced to represent the change of ldd series resistance. simulation results exhibit that the i-v characteristics of the macro model match well with the measurement. finally, the cmos transmission gate and two-stage amplifier were simulated with new bsim3v3 model ill addition to the macro model. the results reveal that the change of ldd series resistance has obvious effects on low temperature cmos circuits. |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000262060000016 |
| 出版者 | SCIENCE PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2390831 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Liu Wen-Yong |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu Wen-Yong,Ding Rui-Jun,Feng Qi. Spice model for ldd structure cmos device at 35k[J]. Journal of infrared and millimeter waves,2008,27(6):465-469. |
| APA | Liu Wen-Yong,Ding Rui-Jun,&Feng Qi.(2008).Spice model for ldd structure cmos device at 35k.Journal of infrared and millimeter waves,27(6),465-469. |
| MLA | Liu Wen-Yong,et al."Spice model for ldd structure cmos device at 35k".Journal of infrared and millimeter waves 27.6(2008):465-469. |
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来源：中国科学院大学
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