Oxidant addition effect on ge(2)sb(2)te(5) phase change film chemical mechanical polishing
文献类型：期刊论文
| 作者 | Zhong, Min1,2; Song, Zhitang1; Liu, Bo1; Feng, Songlin1; Chen, Bomy3 |
| 刊名 | Journal of the electrochemical society
 |
| 出版日期 | 2008 |
| 卷号 | 155期号:11页码:H929-h931 |
| ISSN号 | 0013-4651 |
| DOI | 10.1149/1.2979146 |
| 通讯作者 | Zhong, min(minzhong@mail.sim.ac.cn) |
| 英文摘要 | We studied the oxidant addition effect on chemical mechanical polishing (cmp) of ge(2)sb(2)te(5) (gst) phase change film. atomic force microscopy and scanning electron microscopy (sem) were used to characterize gst cmp performance. the surface roughness was reduced from 2.9 to 0.8 nm by oxidant (h(2)o(2)) addition. the surface chemical state of gst after being dipped in static condition ( absence of polishing) was measured by x-ray photoelectron spectroscopy (xps) and the surface top view conducted by sem. the data showed that ge, sb, and te had been oxidized by h(2)o(2) and the surface oxide layer was formed. the oxidation mechanisms of gst alloy are briefly discussed in terms of xps spectra and oxide theory. finally, the chemical effect on the gst cmp process is discussed and presented with previous results. (c) 2008 the electrochemical society. |
| WOS关键词 | CHANGE MEMORY |
| WOS研究方向 | Electrochemistry ; Materials Science |
| WOS类目 | Electrochemistry ; Materials Science, Coatings & Films |
| 语种 | 英语 |
| WOS记录号 | WOS:000259528200076 |
| 出版者 | ELECTROCHEMICAL SOC INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2392861 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Zhong, Min |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China 3.Silicon Storage Technol Inc, Sunnyvale, CA 94086 USA |
| 推荐引用方式 GB/T 7714 | Zhong, Min,Song, Zhitang,Liu, Bo,et al. Oxidant addition effect on ge(2)sb(2)te(5) phase change film chemical mechanical polishing[J]. Journal of the electrochemical society,2008,155(11):H929-h931. |
| APA | Zhong, Min,Song, Zhitang,Liu, Bo,Feng, Songlin,&Chen, Bomy.(2008).Oxidant addition effect on ge(2)sb(2)te(5) phase change film chemical mechanical polishing.Journal of the electrochemical society,155(11),H929-h931. |
| MLA | Zhong, Min,et al."Oxidant addition effect on ge(2)sb(2)te(5) phase change film chemical mechanical polishing".Journal of the electrochemical society 155.11(2008):H929-h931. |
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来源：中国科学院大学
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