Comparison of growth mechanisms of silicon thin films prepared by hwcvd with pecvd
文献类型：期刊论文
| 作者 | Zhou, Yuqin; Zhou, Bingqing; Gu, Jinhua; Zhu, Meifang; Liu, Fengzhen |
| 刊名 | Thin solid films
 |
| 出版日期 | 2008-01-15 |
| 卷号 | 516期号:5页码:564-567 |
| ISSN号 | 0040-6090 |
| 关键词 | Hwcvd Pecvd Silicon thin film Deposition process Growth mechanism Computer simulation |
| DOI | 10.1016/j.tsf.2007.06.211 |
| 通讯作者 | Zhou, yuqin(yqzhou@gucas.ac.cn) |
| 英文摘要 | Hot-wire chemical vapor deposition (hwcvd) and plasma-enhanced chemical vapor deposition (pecvd) of si thin films show different growth kinetic processes. according to the fractal analysis, the root-mean-square surface roughness 6 and the film thickness d have the relation of delta similar to d(beta), where beta is the dynamic scaling exponent related to the film growth mechanism. it was found that beta is 0.44 for si films prepared by hwcvd and 0.24 by pecvd. the former refers to a stochastic deposition while the latter corresponds to the finite diffusion of the radicals. monte carlo simulations indicate that the sticking process of growth radicals play an important role in determining the morphology of si films. (c) 2007 published by elsevier b.v. |
| WOS关键词 | DEPOSITION |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE SA |
| WOS记录号 | WOS:000252285900019 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2393198 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Zhou, Yuqin |
| 作者单位 | Grad Univ Chinesee Acad Sci, Coll Phys Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, Yuqin,Zhou, Bingqing,Gu, Jinhua,et al. Comparison of growth mechanisms of silicon thin films prepared by hwcvd with pecvd[J]. Thin solid films,2008,516(5):564-567. |
| APA | Zhou, Yuqin,Zhou, Bingqing,Gu, Jinhua,Zhu, Meifang,&Liu, Fengzhen.(2008).Comparison of growth mechanisms of silicon thin films prepared by hwcvd with pecvd.Thin solid films,516(5),564-567. |
| MLA | Zhou, Yuqin,et al."Comparison of growth mechanisms of silicon thin films prepared by hwcvd with pecvd".Thin solid films 516.5(2008):564-567. |
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来源：中国科学院大学
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