The comparisons of growth mechanisms for si thin films with different deposition rates in cvd process by the description of the roughness evolution
文献类型：期刊论文
| 作者 | Liu, F.; Sun, Z.; Zi, W.; Zhou, Y.; Zhu, M. |
| 刊名 | Journal of non-crystalline solids
 |
| 出版日期 | 2008-05-01 |
| 卷号 | 354期号:19-25页码:2345-2349 |
| 关键词 | Silicon Chemical vapor deposition Atomic force microscopy Micro-crystallinity |
| ISSN号 | 0022-3093 |
| DOI | 10.1016/j.jnoncrysol.2007.10.055 |
| 通讯作者 | Liu, f.(liufz@gucas.ac.cn) |
| 英文摘要 | The roughness evolutions of micro-crystalline silicon thin films (mu c-si:h) with different growth rates prepared by chemical vapor depositions have been investigated by atomic force microscopy. the growth exponent beta was measured as 0.8 +/- 0.03, 1.1 +/- 0.07 and 0.75 +/- 0.02 for three sets of samples prepared by pecvd with and without hydrogen dilution ratio modulation and by hwcvd, respectively, and does not correlated with the deposition rate in a set. however, the root-mean-square roughness and lateral correlation length decrease with increasing the deposition rate for both pecvd and hwcvd process. we suggested that the nonstationary growth with large beta is correlated with the shadowing effect. the influence of the deposition rate on the surface roughness could be related to the diminishing of the shadowing effect by surface species diffusion with higher mobility on an h-covered surface. the initial surface and nucleation condition play an important role in the surface roughness evolution. (c) 2008 elsevier b.v. all rights reserved. |
| WOS关键词 | HYDROGENATED AMORPHOUS-SILICON ; SURFACE-ROUGHNESS ; TEMPERATURE |
| WOS研究方向 | Materials Science |
| WOS类目 | Materials Science, Ceramics ; Materials Science, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000256500400062 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2393487 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Liu, F. |
| 作者单位 | Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, F.,Sun, Z.,Zi, W.,et al. The comparisons of growth mechanisms for si thin films with different deposition rates in cvd process by the description of the roughness evolution[J]. Journal of non-crystalline solids,2008,354(19-25):2345-2349. |
| APA | Liu, F.,Sun, Z.,Zi, W.,Zhou, Y.,&Zhu, M..(2008).The comparisons of growth mechanisms for si thin films with different deposition rates in cvd process by the description of the roughness evolution.Journal of non-crystalline solids,354(19-25),2345-2349. |
| MLA | Liu, F.,et al."The comparisons of growth mechanisms for si thin films with different deposition rates in cvd process by the description of the roughness evolution".Journal of non-crystalline solids 354.19-25(2008):2345-2349. |
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来源：中国科学院大学
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