Enhancement of electrical conductance for pentacene thin film transistor by controlling an initial layer-by-layer growth mode directly on sio2 insulator
文献类型：期刊论文
| 作者 | Qi, Qiong1,3; Jiang, Yeping2; Yu, Aifang1; Qiu, Xiaohui1; Jiang, Chao1,3 |
| 刊名 | Japanese journal of applied physics
 |
| 出版日期 | 2009-04-01 |
| 卷号 | 48期号:4页码:4 |
| ISSN号 | 0021-4922 |
| DOI | 10.1143/jjap.48.04c164 |
| 通讯作者 | Qi, qiong() |
| 英文摘要 | Initial nucleation and growth of pentacene films on various pre-cleaning treated sio2 gate insulators were systematically examined by atomic force microscope. the performance of fabricated pentacene thin film transistor devices was found to be highly related to the initial film growth modes. in contrast to the film in the three-dimensional island-like growth mode on sio2 under an organic cleaning process, a layer-by-layer initial growth mode occurred on the sio2 insulator cleaned with ammonia solution which has shown much improved electrical properties of the thin film transistors. field effect mobility of the thin film transistor devices could be achieved as high as 1.0 cm(2) v-1 s(-1) on the bared sio2/si substrate and the on/off ratio was over 10(6). the enhanced electrical conductance was further confirmed by an electrostatic force microscopic observation of quantized electrical potentials via charge-injection to the submonolayer pentacene islands with layer-by-layer growth mode. (c) 2009 the japan society of applied physics |
| WOS关键词 | PERFORMANCE ; MOBILITY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000265652700165 |
| 出版者 | JAPAN SOC APPLIED PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2394837 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Qi, Qiong |
| 作者单位 | 1.Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China 2.Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China 3.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Qi, Qiong,Jiang, Yeping,Yu, Aifang,et al. Enhancement of electrical conductance for pentacene thin film transistor by controlling an initial layer-by-layer growth mode directly on sio2 insulator[J]. Japanese journal of applied physics,2009,48(4):4. |
| APA | Qi, Qiong,Jiang, Yeping,Yu, Aifang,Qiu, Xiaohui,&Jiang, Chao.(2009).Enhancement of electrical conductance for pentacene thin film transistor by controlling an initial layer-by-layer growth mode directly on sio2 insulator.Japanese journal of applied physics,48(4),4. |
| MLA | Qi, Qiong,et al."Enhancement of electrical conductance for pentacene thin film transistor by controlling an initial layer-by-layer growth mode directly on sio2 insulator".Japanese journal of applied physics 48.4(2009):4. |
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来源：中国科学院大学
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