High performance polymer field-effect transistors based on polythiophene derivative with conjugated side chain
文献类型：期刊论文
| 作者 | He, Youjun1,2; Wu, Weiping1,2; Liu, Yunqi1; Li, Yongfang1 |
| 刊名 | Journal of polymer science part a-polymer chemistry
 |
| 出版日期 | 2009-10-15 |
| 卷号 | 47期号:20页码:5304-5312 |
| 关键词 | Charge transport Conjugated polymers Conjugated side chain Hole mobility Organic field effect transistors Polythiophene derivatives Uv-vis spectroscopy |
| ISSN号 | 0887-624X |
| DOI | 10.1002/pola.23579 |
| 通讯作者 | Li, yongfang(liyf@iccas.ac.cn) |
| 英文摘要 | Poly(3-[2-(5-hexyl-2-thienyl) ethenyl]-2,2'-bithiophene) (p2, see scheme 1) with conjugated thienylvinyl side chain was synthesized by copolymerization of the thiophene units with and without conjugated side chain with pd-catalyzed stille coupling method. for comparison, p1 with the hexyl side chain instead of conjugated side chain was also synthesized. p2 film shows broad absorption in the visible region with absorption edge at about 700 nm. the solution-processed polymer field-effect transistors were fabricated and characterized with bottom gate/top contact geometry. the organic field-effect transistors (ofet) based on p2 showed an average hole mobility of about 0.034 cm(2)/vs (the highest value reached 0.061 cm(2)/vs) upon annealing at about 180 degrees c for 30 min, with a threshold voltage of -1.15 v and an on/off ratio of 10(4) with n-octadecyltrichlorosilane (ots) modified sio(2) substrate. in comparison, the ofet based on p1 displayed a hole mobility of 8.9 x 10(-4) cm(2)/vs and an on/off ratio of 10(4) with ots modified sio(2) substrate. the results indicate that the polythiophene derivative with conjugated thienylvinyl side chain is a promising polymer for the application in polymer field-effect transistors. (c) 2009 wiley periodicals, inc. j polym sci part a: polym chem 47: 5304-5312, 2009 |
| WOS关键词 | THIN-FILM TRANSISTORS ; PHOTOVOLTAIC PROPERTIES ; SOLAR-CELLS ; ABSORPTION-SPECTRA ; HOLE MOBILITY ; SEMICONDUCTORS ; COPOLYMER ; VINYLENE |
| WOS研究方向 | Polymer Science |
| WOS类目 | Polymer Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000270692100011 |
| 出版者 | JOHN WILEY & SONS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2395059 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Li, Yongfang |
| 作者单位 | 1.Chinese Acad Sci, Key Lab Organ Solids, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | He, Youjun,Wu, Weiping,Liu, Yunqi,et al. High performance polymer field-effect transistors based on polythiophene derivative with conjugated side chain[J]. Journal of polymer science part a-polymer chemistry,2009,47(20):5304-5312. |
| APA | He, Youjun,Wu, Weiping,Liu, Yunqi,&Li, Yongfang.(2009).High performance polymer field-effect transistors based on polythiophene derivative with conjugated side chain.Journal of polymer science part a-polymer chemistry,47(20),5304-5312. |
| MLA | He, Youjun,et al."High performance polymer field-effect transistors based on polythiophene derivative with conjugated side chain".Journal of polymer science part a-polymer chemistry 47.20(2009):5304-5312. |
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来源：中国科学院大学
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