Fused-ring pyrazine derivatives for n-type field-effect transistors
文献类型：期刊论文
| 作者 | Wang, Haifeng3; Wen, Yugeng3; Yang, Xiaodi; Wang, Ying; Zhou, Weiyi3; Zhang, Shiming3; Zhan, Xiaowei1; Liu, Yunqi; Shuai, Zhigang; Zhu, Daoben |
| 刊名 | Acs applied materials & interfaces
 |
| 出版日期 | 2009-05-01 |
| 卷号 | 1期号:5页码:1122-1129 |
| 关键词 | N-type organic semiconductor Field-effect transistor Fused-ring pyrazine Synthesis Density functional theory Structure-property relationship |
| ISSN号 | 1944-8244 |
| DOI | 10.1021/am900093p |
| 通讯作者 | Zhan, xiaowei(xwzhan@iccas.ac.cn) |
| 英文摘要 | Three new fused-ring pyrazine derivatives end-functionalized with trifluoromethylphenyl groups have been synthesized. the effect of a fused-ring pyrazine core on the thermal, electronic, optical, thin film morphology, and organic field-effect transistor (ofet) properties was investigated both experimentally and theoretically. electrochemistry measurements and density functional theory calculations suggest that the pyrazine core plays a significant role in tuning the electron affinities of these compounds. the optical absorption and fluorescence properties are also sensitive to the pyrazine core. the ofet devices based on the fused-ring pyrazine compounds exhibit electron mobilities as high as ca. 0.03 cm(2) v(-1) s(-1) under nitrogen, and their performance is sensitive to the pyrazine core. the larger pyrazine core leads to a lower lumo level and lower reorganization energy, to more ordered thin film morphology with larger grain size, and finally to higher mobilities. |
| WOS关键词 | HIGH-ELECTRON-MOBILITY ; THIN-FILM TRANSISTORS ; HIGH-PERFORMANCE ; ORGANIC SEMICONDUCTORS ; CHARGE-TRANSPORT ; TRIFLUOROMETHYLPHENYL GROUPS ; ORGANOMETALLIC REAGENTS ; CRYSTAL-STRUCTURES ; FET PROPERTIES ; ALPHA-DIONES |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science |
| WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000268665200021 |
| 出版者 | AMER CHEMICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2396947 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Zhan, Xiaowei |
| 作者单位 | 1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China 2.Chinese Acad Sci, CAS Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China 3.Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Haifeng,Wen, Yugeng,Yang, Xiaodi,et al. Fused-ring pyrazine derivatives for n-type field-effect transistors[J]. Acs applied materials & interfaces,2009,1(5):1122-1129. |
| APA | Wang, Haifeng.,Wen, Yugeng.,Yang, Xiaodi.,Wang, Ying.,Zhou, Weiyi.,...&Zhu, Daoben.(2009).Fused-ring pyrazine derivatives for n-type field-effect transistors.Acs applied materials & interfaces,1(5),1122-1129. |
| MLA | Wang, Haifeng,et al."Fused-ring pyrazine derivatives for n-type field-effect transistors".Acs applied materials & interfaces 1.5(2009):1122-1129. |
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来源：中国科学院大学
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