Single-electron tunneling and coulomb blockade in carbon-based quantum dots
文献类型：期刊论文
| 作者 | Fan, Wei1,2; Zhang, Rui-qin1,3,4 |
| 刊名 | Frontiers of physics in china
 |
| 出版日期 | 2009-09-01 |
| 卷号 | 4期号:3页码:315-326 |
| 关键词 | Single-electron tunneling (set) Coulomb blockade (cb) Coulomb staircase Carbon nanotube (cnt) Fullerene Orthodox theory |
| ISSN号 | 1673-3487 |
| DOI | 10.1007/s11467-009-0023-9 |
| 通讯作者 | Zhang, rui-qin(aprqz@cityu.edu.hk) |
| 英文摘要 | Single-electron tunneling (set) and coulomb blockade (cb) phenomena have been widely observed in nanoscaled electronics and have received intense attention around the world. in the past few years, we have studied set in carbon nanotube fragments and fullerenes by applying the so-called "ortho-dox" theory [28]. as outlined in this review article, we investigated the single-electron charging and discharging process via current-voltage characteristics, gate effect, and electronic structure-related factors. because the investigated geometric structures are three-dimensionally confined, resulting in a discrete spectrum of energy levels resembling the property of quantum dots, we evidenced the cb and coulomb staircases in these structures. these nanostructures are sufficiently small that introducing even a single electron is sufficient to dramatically change the transport properties as a result of the charging energy associated with this extra electron. we found that the coulomb staircases occur in the i-v characteristics only when the width of the left barrier junction is smaller than that of the right barrier junction. in this case, the transmission coefficient of the emitter junction is larger than that of the collector junction; also, occupied levels enter the bias window, thereby enhancing the tunneling extensively. |
| WOS关键词 | ROOM-TEMPERATURE ; SMALL FULLERENES ; C-60 MOLECULES ; NANOTUBES ; OSCILLATIONS ; DENSITY ; MICROSCOPY ; TRANSPORT ; JUNCTIONS ; BEHAVIOR |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000280414100007 |
| 出版者 | HIGHER EDUCATION PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2398431 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Zhang, Rui-qin |
| 作者单位 | 1.Chinese Acad Sci, Tech Inst Phys & Chem, Nanoorgan Photoelect Lab, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100190, Peoples R China 3.City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China 4.City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fan, Wei,Zhang, Rui-qin. Single-electron tunneling and coulomb blockade in carbon-based quantum dots[J]. Frontiers of physics in china,2009,4(3):315-326. |
| APA | Fan, Wei,&Zhang, Rui-qin.(2009).Single-electron tunneling and coulomb blockade in carbon-based quantum dots.Frontiers of physics in china,4(3),315-326. |
| MLA | Fan, Wei,et al."Single-electron tunneling and coulomb blockade in carbon-based quantum dots".Frontiers of physics in china 4.3(2009):315-326. |
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来源：中国科学院大学
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