Band gap engineering of gan nanowires by surface functionalization
文献类型：期刊论文
| 作者 | Fang, D. Q.1,2,3; Rosa, A. L.1; Frauenheim, Th.1; Zhang, R. Q.2,4,5 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2009-02-16 |
| 卷号 | 94期号:7页码:3 |
| 关键词 | Adsorption Density functional theory Energy gap Gallium compounds Iii-v semiconductors Nanowires Passivation Semiconductor quantum wires Surface states Wide band gap semiconductors |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3086316 |
| 通讯作者 | Rosa, a. l.(darosa@bccms.uni-bremen.de) |
| 英文摘要 | We investigated [0001] bare and functionalized gallium nitride (gan) nanowires by using the density-functional theory. passivation of gan nanowires with various functional groups (h, nh(2), oh, and sh) show distinct electronic properties. we found that the band gap for the nanowires with partial surface coverage is dependent on the coverage ratio and adsorption sites. in view of the importance of surface states to the properties of nanowires, we suggest that the electronic and optical properties can be modulated by controlling the surface states of nanowires by functionalization. |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000263599200072 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2398813 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Rosa, A. L. |
| 作者单位 | 1.Univ Bremen, BCCMS, D-28359 Bremen, Germany 2.Chinese Acad Sci, Tech Inst Phys & Chem, Nanoorgan Photoelect Lab, Beijing 100101, Peoples R China 3.Chinese Acad Sci, Grad Univ, Beijing 100190, Peoples R China 4.City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China 5.City Univ Hong Kong, Ctr Super Diamond & Adv Films COSDAF, Hong Kong, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fang, D. Q.,Rosa, A. L.,Frauenheim, Th.,et al. Band gap engineering of gan nanowires by surface functionalization[J]. Applied physics letters,2009,94(7):3. |
| APA | Fang, D. Q.,Rosa, A. L.,Frauenheim, Th.,&Zhang, R. Q..(2009).Band gap engineering of gan nanowires by surface functionalization.Applied physics letters,94(7),3. |
| MLA | Fang, D. Q.,et al."Band gap engineering of gan nanowires by surface functionalization".Applied physics letters 94.7(2009):3. |
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来源：中国科学院大学
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