Structural characteristics and resistive switching properties of thermally prepared tio2 thin films
文献类型：期刊论文
| 作者 | Cao, Xun1,2; Li, Xiaomin1; Yu, Weidong1; Zhang, Yiwen1,2; Yang, Rui1,2; Liu, Xinjun1; Kong, Jingfang3; Shen, Wenzhong3 |
| 刊名 | Journal of alloys and compounds
 |
| 出版日期 | 2009-11-03 |
| 卷号 | 486期号:1-2页码:458-461 |
| 关键词 | Oxide materials Thin films Oxidation Resistive switching |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2009.06.175 |
| 通讯作者 | Li, xiaomin(lixm@mail.sic.ac.cn) |
| 英文摘要 | Polycrystalline tio2 thin films were formed on pt(1 1 1)/ti/sio2/si by thermal oxidation of ti films with temperatures ranging from 600 degrees c to 800 degrees c. results of raman spectra testing indicate that the structure of the oxidized tio2 films is rutile phase. the resistance switching behaviors (rsb) have been confirmed in pt/tio2/pt structures. a stable rsb with a narrow dispersion of the resistance states and switching voltages was observed in the sample fabricated with the oxidation temperature of 600 degrees c. the resistance ratios of high resistance states to low resistance states are larger than 10(3) with the set and reset voltage as low as 2.5 v and 0.6 v, respectively. (c) 2009 elsevier b.v. all rights reserved. |
| WOS关键词 | MECHANISM |
| WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000271872400097 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2399600 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Li, Xiaomin |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China 3.Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200030, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cao, Xun,Li, Xiaomin,Yu, Weidong,et al. Structural characteristics and resistive switching properties of thermally prepared tio2 thin films[J]. Journal of alloys and compounds,2009,486(1-2):458-461. |
| APA | Cao, Xun.,Li, Xiaomin.,Yu, Weidong.,Zhang, Yiwen.,Yang, Rui.,...&Shen, Wenzhong.(2009).Structural characteristics and resistive switching properties of thermally prepared tio2 thin films.Journal of alloys and compounds,486(1-2),458-461. |
| MLA | Cao, Xun,et al."Structural characteristics and resistive switching properties of thermally prepared tio2 thin films".Journal of alloys and compounds 486.1-2(2009):458-461. |
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来源：中国科学院大学
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