Electronic structure of ligas2
文献类型：期刊论文
| 作者 | Atuchin, V. V.2; Isaenko, L. I.3; Kesler, V. G.4; Lobanov, S.3; Huang, H.1,6; Lin, Z. S.1,5 |
| 刊名 | Solid state communications
 |
| 出版日期 | 2009-04-01 |
| 卷号 | 149期号:13-14页码:572-575 |
| 关键词 | Electronic band structure Photoelectron spectroscopies |
| ISSN号 | 0038-1098 |
| DOI | 10.1016/j.ssc.2008.12.048 |
| 通讯作者 | Lin, z. s.(zslin@mail.ipc.ac.cn) |
| 英文摘要 | X-ray photoelectron spectroscopy (xps) measurement has been performed to determine the valence band structure of ligas2 crystals. the experimental measurement is compared with the electronic structure obtained from the density functional calculations. it is found that the ga 3d states in the xps spectrum are much higher than the calculated results. in order to eliminate this discrepancy, the lda + u method is employed and reasonable agreement is achieved. further calculations show that the difference of the linear and nonlinear optical coefficients between lda and lda + u calculations is negligibly small, indicating that the ga 3d states are actually independent of the excited properties of ligas2 crystals since they are located at a very deep position in the valence bands. (c) 2009 elsevier ltd. all rights reserved. |
| WOS关键词 | NONLINEAR-OPTICAL APPLICATIONS ; MID-IR ; SINGLE-CRYSTALS ; GROWTH ; POTENTIALS ; STATES ; TE ; SE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000264432100017 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2402842 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Lin, Z. S. |
| 作者单位 | 1.Chinese Acad Sci, Beijing Ctr Crystal R&D, Tech Inst Phys & Chem, Beijing 100080, Peoples R China 2.SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia 3.SB RAS, Inst Geol & Mineral, Lab Crystal Growth, Novosibirsk 630090, Russia 4.SB RAS, Inst Semicond Phys, Lab Phys Bases Integrated Microelect, Novosibirsk 630090, Russia 5.Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England 6.Chinese Acad Sci, Grad Sch, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Atuchin, V. V.,Isaenko, L. I.,Kesler, V. G.,et al. Electronic structure of ligas2[J]. Solid state communications,2009,149(13-14):572-575. |
| APA | Atuchin, V. V.,Isaenko, L. I.,Kesler, V. G.,Lobanov, S.,Huang, H.,&Lin, Z. S..(2009).Electronic structure of ligas2.Solid state communications,149(13-14),572-575. |
| MLA | Atuchin, V. V.,et al."Electronic structure of ligas2".Solid state communications 149.13-14(2009):572-575. |
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来源：中国科学院大学
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