Polishing of (100) gamma-lialo2 wafer and its effect on the epitaxial growth of zno films by mocvd
文献类型：期刊论文
| 作者 | Lin, Hui1,2; Zhou, Shengming1; Teng, Hao1,2; Jia, Tingting1,2; Hou, Xiaorui1,2; Gu, Shulin3,4; Zhu, Shunming3,4; Xie, Zili3,4; Han, Ping3,4; Zhang, Rong3,4 |
| 刊名 | Journal of alloys and compounds
 |
| 出版日期 | 2009-06-24 |
| 卷号 | 479期号:1-2页码:L8-l10 |
| ISSN号 | 0925-8388 |
| 关键词 | Semiconductors Thin films Vapor deposition X-ray diffraction |
| DOI | 10.1016/j.jallcom.2008.12.086 |
| 通讯作者 | Zhou, shengming(zhousm@siom.ac.cn) |
| 英文摘要 | The last process of the (100) gamma-lialo2 (lao) wafer polishing has been investigated by adopting two different sizes (20 nm and 40 nm) sio2 suspension. atomic force microscopy images show that the suspension with 20 nm sio2 particles tends to introduce a set of parallel trenches to the wafer surface and the suspension with 40 nm sio2 particles can provide a relative smooth surface. the following epitaxial zno films grown on the two as-prepared wafers demonstrate that the trench structure of the wafer surface will lead to mixed orientations of the zno film and single phase m-plane zno film can be obtained on the (1 0 0) lao with a smooth surface. (c) 2009 elsevier b.v. all rights reserved. |
| WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE SA |
| WOS记录号 | WOS:000267063300003 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2403099 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Zhou, Shengming |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat Sci & Technol High Power Lasers, Shanghai 201800, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China 3.Nanjing Univ, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China 4.Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lin, Hui,Zhou, Shengming,Teng, Hao,et al. Polishing of (100) gamma-lialo2 wafer and its effect on the epitaxial growth of zno films by mocvd[J]. Journal of alloys and compounds,2009,479(1-2):L8-l10. |
| APA | Lin, Hui.,Zhou, Shengming.,Teng, Hao.,Jia, Tingting.,Hou, Xiaorui.,...&Zhang, Rong.(2009).Polishing of (100) gamma-lialo2 wafer and its effect on the epitaxial growth of zno films by mocvd.Journal of alloys and compounds,479(1-2),L8-l10. |
| MLA | Lin, Hui,et al."Polishing of (100) gamma-lialo2 wafer and its effect on the epitaxial growth of zno films by mocvd".Journal of alloys and compounds 479.1-2(2009):L8-l10. |
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来源：中国科学院大学
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