Effect of ni thickness on the contact properties of ni/6h-sic analyzed by combinatorial method
文献类型：期刊论文
| 作者 | Huang Wei1,3; Chen Zhi-Zhan1; Chen Yi1; Shi Er-Wei1; Zhang Jing-Yu2,3; Liu Qing-Feng2; Liu Qian2 |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2010-05-01 |
| 卷号 | 59期号:5页码:3466-3472 |
| 关键词 | Silicon carbide Schottky contact Ohmic contact Combinatorial method |
| ISSN号 | 1000-3290 |
| 通讯作者 | Chen zhi-zhan(zzchen@mail.sic.ac.cn) |
| 英文摘要 | In this paper,combinatorial method was introduced for the first time to disclose the effect of ni thickness on the ni/sic contact properties. sixteen contacts with the same ni thickness showed similar schottky contact properties. the current voltage curves (i-v) were different for the schottky contacts with different ni thickness from 10 nm to 160 nm. the effect of the ni thickness to the ideality factor n and the effective barrier height phi(b) was found to be the origin of the different schottky contact properties. after rapid annealed at 1000 c, all the contacts showed good linear i-v curves, which indicated the formation of ohmic contacts. ni(2)si was the main reaction product. comparing the slopes of the iv curves, the contacts with 30-70 nm ni showed good ohmic contact properties. the results confirmed our previous conclusion about the key role of appropriate carbon-enriched layer (cel) for the formation of ohmic contacts on sic. |
| WOS关键词 | NICKEL/TITANIUM OHMIC CONTACTS ; SILICON-CARBIDE ; SCHOTTKY CONTACTS ; NICKEL CONTACTS ; METAL THICKNESS ; DISCOVERY ; OPTIMIZATION ; GROWTH |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000277733700085 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2406587 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Chen Zhi-Zhan |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, Wide Band Gap Mat Lab, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 3.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang Wei,Chen Zhi-Zhan,Chen Yi,et al. Effect of ni thickness on the contact properties of ni/6h-sic analyzed by combinatorial method[J]. Acta physica sinica,2010,59(5):3466-3472. |
| APA | Huang Wei.,Chen Zhi-Zhan.,Chen Yi.,Shi Er-Wei.,Zhang Jing-Yu.,...&Liu Qian.(2010).Effect of ni thickness on the contact properties of ni/6h-sic analyzed by combinatorial method.Acta physica sinica,59(5),3466-3472. |
| MLA | Huang Wei,et al."Effect of ni thickness on the contact properties of ni/6h-sic analyzed by combinatorial method".Acta physica sinica 59.5(2010):3466-3472. |
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来源：中国科学院大学
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