Effects of rotating magnetic field on bi12sio20 crystal growth by vertical zone-melting technique
文献类型：期刊论文
| 作者 | Liu, Y.1; Ai, F.1; Pan, X. H.1; Zhang, Y.1,2; Zhou, Y. F.1; Feng, C. D.1 |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2010-04-15 |
| 卷号 | 312期号:9页码:1622-1626 |
| 关键词 | Crystal growth Rotating magnetic field Vertical zone-melting Oxide crystal |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2010.01.025 |
| 通讯作者 | Liu, y.(liuyan@mail.sic.ac.cn) |
| 英文摘要 | Two bi12sio20 single crystals empty set10 x 30 mm(2) were grown with and without a rotating magnetic field by the vertical zone-melting technique. growth striations are completely absent and defects almost could not be found inside the crystal grown with a rotating magnetic field, while striations and numerous defects could be found inside the single crystal grown without a rotating magnetic field. the mechanism of effect of a rotating magnetic field on the growth of bi12sio20 crystals is tentatively proposed so that the rotating magnetic field induces a current and consequently generates a forced convection in the melt. if a steady, axisymmetric and desirable convection is generated by the applied rotating magnetic field, the transport of heat and mass in the melt near the crystal-melt interface is enhanced and maintains stability. as a result, the crystallographic perfection and homogeneity of the grown crystal could be significantly improved by using a rotating magnetic field combined with the vertical zone-melting technique. (c) 2010 elsevier b.v. all rights reserved. |
| WOS关键词 | BRIDGMAN GROWTH ; SILICON ; GAAS ; CONVECTION |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000277530200026 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2408579 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Liu, Y. |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Y.,Ai, F.,Pan, X. H.,et al. Effects of rotating magnetic field on bi12sio20 crystal growth by vertical zone-melting technique[J]. Journal of crystal growth,2010,312(9):1622-1626. |
| APA | Liu, Y.,Ai, F.,Pan, X. H.,Zhang, Y.,Zhou, Y. F.,&Feng, C. D..(2010).Effects of rotating magnetic field on bi12sio20 crystal growth by vertical zone-melting technique.Journal of crystal growth,312(9),1622-1626. |
| MLA | Liu, Y.,et al."Effects of rotating magnetic field on bi12sio20 crystal growth by vertical zone-melting technique".Journal of crystal growth 312.9(2010):1622-1626. |
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来源：中国科学院大学
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