Influence of different dielectrics on the first layer grain sizes and its effect on the mobility of pentacene-based thin-film transistors
文献类型:期刊论文
作者 | Hu, Yuanyuan1,2; Qi, Qiong1; Jiang, Chao1 |
刊名 | Applied physics letters
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出版日期 | 2010-03-29 |
卷号 | 96期号:13页码:3 |
关键词 | Atomic force microscopy Grain boundaries Grain size Surface energy Thin film transistors |
ISSN号 | 0003-6951 |
DOI | 10.1063/1.3374887 |
通讯作者 | Jiang, chao(jiangch@nanoctr.cn) |
英文摘要 | Pentacene thin-film transistors using different dielectrics including thermal oxide sio(2) and a series of bilayered dielectrics that are polymethyl methacrylate/sio(2), polycarbonate/sio(2), and polystyrene/sio(2) were fabricated. atomic force microscopic measurements indicated that grain sizes of the submonolayer films were drastically different with the various dielectrics. dielectrics with lower surface energy lead to larger grain sizes at the first monolayer and consequently higher mobility of the fabricated transistors. the correlation between the mobility and the grain sizes at the first monolayer of the pentacene films could be explained by utilizing a microscopic mobility model relating to the grains and grain boundaries. |
WOS关键词 | LARGE-AREA ; PRESSURE |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000276275300068 |
出版者 | AMER INST PHYSICS |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2414612 |
专题 | 中国科学院大学 |
通讯作者 | Jiang, Chao |
作者单位 | 1.Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China |
推荐引用方式 GB/T 7714 | Hu, Yuanyuan,Qi, Qiong,Jiang, Chao. Influence of different dielectrics on the first layer grain sizes and its effect on the mobility of pentacene-based thin-film transistors[J]. Applied physics letters,2010,96(13):3. |
APA | Hu, Yuanyuan,Qi, Qiong,&Jiang, Chao.(2010).Influence of different dielectrics on the first layer grain sizes and its effect on the mobility of pentacene-based thin-film transistors.Applied physics letters,96(13),3. |
MLA | Hu, Yuanyuan,et al."Influence of different dielectrics on the first layer grain sizes and its effect on the mobility of pentacene-based thin-film transistors".Applied physics letters 96.13(2010):3. |
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来源:中国科学院大学
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