中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of different dielectrics on the first layer grain sizes and its effect on the mobility of pentacene-based thin-film transistors

文献类型:期刊论文

作者Hu, Yuanyuan1,2; Qi, Qiong1; Jiang, Chao1
刊名Applied physics letters
出版日期2010-03-29
卷号96期号:13页码:3
关键词Atomic force microscopy Grain boundaries Grain size Surface energy Thin film transistors
ISSN号0003-6951
DOI10.1063/1.3374887
通讯作者Jiang, chao(jiangch@nanoctr.cn)
英文摘要Pentacene thin-film transistors using different dielectrics including thermal oxide sio(2) and a series of bilayered dielectrics that are polymethyl methacrylate/sio(2), polycarbonate/sio(2), and polystyrene/sio(2) were fabricated. atomic force microscopic measurements indicated that grain sizes of the submonolayer films were drastically different with the various dielectrics. dielectrics with lower surface energy lead to larger grain sizes at the first monolayer and consequently higher mobility of the fabricated transistors. the correlation between the mobility and the grain sizes at the first monolayer of the pentacene films could be explained by utilizing a microscopic mobility model relating to the grains and grain boundaries.
WOS关键词LARGE-AREA ; PRESSURE
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
WOS记录号WOS:000276275300068
出版者AMER INST PHYSICS
URI标识http://www.irgrid.ac.cn/handle/1471x/2414612
专题中国科学院大学
通讯作者Jiang, Chao
作者单位1.Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Hu, Yuanyuan,Qi, Qiong,Jiang, Chao. Influence of different dielectrics on the first layer grain sizes and its effect on the mobility of pentacene-based thin-film transistors[J]. Applied physics letters,2010,96(13):3.
APA Hu, Yuanyuan,Qi, Qiong,&Jiang, Chao.(2010).Influence of different dielectrics on the first layer grain sizes and its effect on the mobility of pentacene-based thin-film transistors.Applied physics letters,96(13),3.
MLA Hu, Yuanyuan,et al."Influence of different dielectrics on the first layer grain sizes and its effect on the mobility of pentacene-based thin-film transistors".Applied physics letters 96.13(2010):3.

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来源:中国科学院大学

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