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Chinese Academy of Sciences Institutional Repositories Grid
Observation of strong anisotropic forbidden transitions in (001) ingaas/gaas single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain

文献类型:期刊论文

作者Yu,Jin-Ling; Chen,Yong-Hai; Tang,Chen-Guang; Jiang,ChongYun; Ye,Xiao-Ling
刊名Nanoscale research letters
出版日期2011-03-10
卷号6期号:1
ISSN号1556-276X
DOI10.1186/1556-276x-6-210
通讯作者Chen,yong-hai(yhchen@semi.ac.cn)
英文摘要Abstractthe strong anisotropic forbidden transition has been observed in a series of ingaas/gaas single-quantum well with well width ranging between 3 nm and 7 nm at 80 k. numerical calculations within the envelope function framework have been performed to analyze the origin of the optical anisotropic forbidden transition. it is found that the optical anisotropy of this transition can be mainly attributed to indium segregation effect. the effect of uniaxial strain on in-plane optical anisotropy (ipoa) is also investigated. the ipoa of the forbidden transition changes little with strain, while that of the allowed transition shows a linear dependence on strain.pacs 78.66.fd, 78.20.bh, 78.20.fm
语种英语
出版者Springer New York
WOS记录号BMC:10.1186/1556-276X-6-210
URI标识http://www.irgrid.ac.cn/handle/1471x/2426168
专题半导体研究所
通讯作者Chen,Yong-Hai
作者单位Institute of Semiconductors, Chinese Academy of Sciences; Key Laboratory of Semiconductor Materials Science
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GB/T 7714
Yu,Jin-Ling,Chen,Yong-Hai,Tang,Chen-Guang,et al. Observation of strong anisotropic forbidden transitions in (001) ingaas/gaas single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain[J]. Nanoscale research letters,2011,6(1).
APA Yu,Jin-Ling,Chen,Yong-Hai,Tang,Chen-Guang,Jiang,ChongYun,&Ye,Xiao-Ling.(2011).Observation of strong anisotropic forbidden transitions in (001) ingaas/gaas single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain.Nanoscale research letters,6(1).
MLA Yu,Jin-Ling,et al."Observation of strong anisotropic forbidden transitions in (001) ingaas/gaas single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain".Nanoscale research letters 6.1(2011).

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来源:半导体研究所

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