Dependence of the electrical and optical properties on growth interruption in alas/in0.53ga0.47as/inas resonant tunneling diodes
文献类型：期刊论文
| 作者 | Zhang,Yang1,2; Guan,Min2; Liu,Xingfang2; Zeng,Yiping2 |
| 刊名 | Nanoscale research letters
 |
| 出版日期 | 2011-11-23 |
| 卷号 | 6期号:1 |
| 关键词 | Resonant tunneling diode I-v characteristics Molecular beam epitaxy |
| ISSN号 | 1556-276X |
| DOI | 10.1186/1556-276x-6-603 |
| 通讯作者 | Zhang,yang(zhang_yang@semi.ac.cn) |
| 英文摘要 | Abstractthe dependence of interface roughness of pseudomorphic alas/in0.53ga0.47as/inas resonant tunneling diodes [rtds] grown by molecular beam epitaxy on interruption time was studied by current-voltage [i-v] characteristics, photoluminescence [pl] spectroscopy, and transmission electron microscopy [tem]. we have observed that a splitting in the quantum-well pl due to island formation in the quantum well is sensitive to growth interruption at the alas/in0.53ga0.47as interfaces. tem images also show flatter interfaces with a few islands which only occur by applying an optimum value of interruption time. the symmetry of i-v characteristics of rtds with pl and tem results is consistent because tunneling current is highly dependent on barrier thickness and interface roughness. |
| 语种 | 英语 |
| WOS记录号 | BMC:10.1186/1556-276X-6-603 |
| 出版者 | Springer New York |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426171 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang,Yang |
| 作者单位 | 1.Chinese Academy of Sciences; Key Laboratory of Semiconductor Materials Science 2.Institute of Semiconductors, Chinese Academy of Science; Material Science Center |
| 推荐引用方式 GB/T 7714 | Zhang,Yang,Guan,Min,Liu,Xingfang,et al. Dependence of the electrical and optical properties on growth interruption in alas/in0.53ga0.47as/inas resonant tunneling diodes[J]. Nanoscale research letters,2011,6(1). |
| APA | Zhang,Yang,Guan,Min,Liu,Xingfang,&Zeng,Yiping.(2011).Dependence of the electrical and optical properties on growth interruption in alas/in0.53ga0.47as/inas resonant tunneling diodes.Nanoscale research letters,6(1). |
| MLA | Zhang,Yang,et al."Dependence of the electrical and optical properties on growth interruption in alas/in0.53ga0.47as/inas resonant tunneling diodes".Nanoscale research letters 6.1(2011). |
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来源：半导体研究所
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