Valence band offset of β-ga2o3/wurtzite gan heterostructure measured by x-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Wei,Wei1; Qin,Zhixin1; Fan,Shunfei1; Li,Zhiwei2; Shi,Kai2; Zhu,Qinsheng2; Zhang,Guoyi1 |
| 刊名 | Nanoscale research letters
 |
| 出版日期 | 2012-10-10 |
| 卷号 | 7期号:1 |
| 关键词 | β-ga2o3/wurtzite gan heterostructure Band offset X-ray photoelectron spectroscopy |
| ISSN号 | 1556-276X |
| DOI | 10.1186/1556-276x-7-562 |
| 通讯作者 | Qin,zhixin(zxqin@pku.edu.cn) |
| 英文摘要 | Abstracta sample of the β-ga2o3/wurtzite gan heterostructure has been grown by dry thermal oxidation of gan on a sapphire substrate. x-ray diffraction measurements show that the β-ga2o3 layer was formed epitaxially on gan. the valence band offset of the β-ga2o3/wurtzite gan heterostructure is measured by x-ray photoelectron spectroscopy. it is demonstrated that the valence band of the β-ga2o3/gan structure is 1.40?±?0.08 ev. |
| 语种 | 英语 |
| WOS记录号 | BMC:10.1186/1556-276X-7-562 |
| 出版者 | Springer New York |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426172 |
| 专题 | 半导体研究所 |
| 通讯作者 | Qin,Zhixin |
| 作者单位 | 1.Peking University; State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics 2.Institute of Semiconductors, Chinese Academy of Sciences; Key Laboratory of Semiconductor Materials Science |
| 推荐引用方式 GB/T 7714 | Wei,Wei,Qin,Zhixin,Fan,Shunfei,et al. Valence band offset of β-ga2o3/wurtzite gan heterostructure measured by x-ray photoelectron spectroscopy[J]. Nanoscale research letters,2012,7(1). |
| APA | Wei,Wei.,Qin,Zhixin.,Fan,Shunfei.,Li,Zhiwei.,Shi,Kai.,...&Zhang,Guoyi.(2012).Valence band offset of β-ga2o3/wurtzite gan heterostructure measured by x-ray photoelectron spectroscopy.Nanoscale research letters,7(1). |
| MLA | Wei,Wei,et al."Valence band offset of β-ga2o3/wurtzite gan heterostructure measured by x-ray photoelectron spectroscopy".Nanoscale research letters 7.1(2012). |
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来源：半导体研究所
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