Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane algan/gan heterostructures
文献类型：期刊论文
| 作者 | Chen, Z; Chua, SJ; Yuan, HR; Liu, XL; Lu, DC; Han, PD; Wang, ZG |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-08-01 |
| 卷号 | 268期号:3-4页码:504-508 |
| 关键词 | Metalorganic chemical vapor deposition Semiconducting iii-v materials |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2004.04.081 |
| 通讯作者 | Chen, z(smacz@nus.edu.sg) |
| 英文摘要 | Photoluminescence (pl) and temperature-dependent hall effect measurements were carried out in (0001) and (11 (2) over bar0) algan/gan heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. there are strong spontaneous and piezoelectric electric fields (spf) along the growth orientation of the (0001) algan/gan heterostructures. at the same time there are no corresponding spf along that of the (1120) algan/gan. a strong pl peak related to the recombination between two-dimensional electron gas (2deg) and photoexcited holes was observed at 3.258 ev at room temperature in (0001) algan/gan heterointerfaces while no corresponding pl peak was observed in (11 (2) over bar0). the existence of a 2deg was observed in (0001) algan/gan multi-layers with a mobility saturated at 6000 cm(2)/v s below 80 k, whereas a much lower mobility was measured in (11 (2) over bar0). these results indicated that the spf was the main element to cause the high mobility and high sheet-electron-density 2deg in algan/gan heterostructures. (c) 2004 elsevier b.v. all rights reserved. |
| WOS关键词 | DOPED AL(X)GA1-XN/GAN HETEROSTRUCTURES ; CARRIER CONFINEMENT ; EFFECT TRANSISTORS ; PHOTOLUMINESCENCE ; MOBILITY ; HETEROJUNCTION ; INTERFACE ; HFETS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000223087000032 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426185 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, Z |
| 作者单位 | 1.Singapore MIT Alliance, AMMNS, Singapore 117576, Singapore 2.Inst Mat Res & Engn, Singapore 117602, Singapore 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, Z,Chua, SJ,Yuan, HR,et al. Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane algan/gan heterostructures[J]. Journal of crystal growth,2004,268(3-4):504-508. |
| APA | Chen, Z.,Chua, SJ.,Yuan, HR.,Liu, XL.,Lu, DC.,...&Wang, ZG.(2004).Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane algan/gan heterostructures.Journal of crystal growth,268(3-4),504-508. |
| MLA | Chen, Z,et al."Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane algan/gan heterostructures".Journal of crystal growth 268.3-4(2004):504-508. |
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来源：半导体研究所
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