The investigation of gan films grown on si substrates by hot-wall chemical vapor deposition
文献类型：期刊论文
| 作者 | Cao, WT; Sun, ZC; Wei, QQ; Xue, CS; Sun, HB |
| 刊名 | Rare metal materials and engineering
 |
| 出版日期 | 2004-11-01 |
| 卷号 | 33期号:11页码:1226-1228 |
| 关键词 | Hot-wall chemical vapor deposition Gan With h-2 as carrier gas |
| ISSN号 | 1002-185X |
| 通讯作者 | Cao, wt(ivy_sun.163@163.com) |
| 英文摘要 | Gan films on si substrates were obtained by hot-wall chemical vapor deposition and the growth condition during the process was investigated. the structure, surface morphology and the optical properties were characterized by x-ray diffraction (xrd), scanning electron microscopy (sem) and photoluminescence (pl). it indicated that hexagonal wurtzite gan films were obtained on si substrates. preliminary results suggest that h-2 as carrier gas play an important role at the same temperature in the growth of gan films. |
| WOS关键词 | EPITAXIAL-GROWTH ; BUFFER |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000225582400026 |
| 出版者 | NORTHWEST INST NONFERROUS METAL RESEARCH |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426191 |
| 专题 | 半导体研究所 |
| 通讯作者 | Cao, WT |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cao, WT,Sun, ZC,Wei, QQ,et al. The investigation of gan films grown on si substrates by hot-wall chemical vapor deposition[J]. Rare metal materials and engineering,2004,33(11):1226-1228. |
| APA | Cao, WT,Sun, ZC,Wei, QQ,Xue, CS,&Sun, HB.(2004).The investigation of gan films grown on si substrates by hot-wall chemical vapor deposition.Rare metal materials and engineering,33(11),1226-1228. |
| MLA | Cao, WT,et al."The investigation of gan films grown on si substrates by hot-wall chemical vapor deposition".Rare metal materials and engineering 33.11(2004):1226-1228. |
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来源：半导体研究所
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