中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication of 1.55-mu m si-based resonant cavity enhanced photodetectors using sol-gel bonding

文献类型:期刊论文

作者Mao, RW; Li, CB; Zuo, YH; Cheng, BW; Teng, XG; Luo, LP; Yu, JZ; Wang, QM
刊名Ieee photonics technology letters
出版日期2004-08-01
卷号16期号:8页码:1930-1932
关键词Bonding medium Direct bonding Photodetector Resonant cavity enhanced (rce)
ISSN号1041-1135
DOI10.1109/lpt.2004.831049
通讯作者Mao, rw(maorongwei@red.semi.ac.cn)
英文摘要In this work, a novel bonding method using silicate gel as the bonding medium was developed to fabricate an ingaas narrow-band response resonant cavity enhanced photodetector on a silicon substrate. the bonding was performed at a low temperature of 350 degreesc without any special treatment on bonding surfaces and a si-based narrow-band response ingaas photodetector was successfully fabricated, with a quantum efficiency of 34.4% at the resonance wavelength of 1.54 mum, and a full-width at half-maximum of about 27 nm. the photodetector has a linear photoresponse up to 4-mw optical power under 1.5 v or higher reverse bias. the low temperature wafer bonding process demonstrates a great potential in device fabrication.
WOS关键词QUANTUM-EFFICIENCY ; OPTIMIZATION ; PHOTODIODES ; DESIGN
WOS研究方向Engineering ; Optics ; Physics
WOS类目Engineering, Electrical & Electronic ; Optics ; Physics, Applied
语种英语
WOS记录号WOS:000222884300046
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
URI标识http://www.irgrid.ac.cn/handle/1471x/2426192
专题半导体研究所
通讯作者Mao, RW
作者单位Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
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Mao, RW,Li, CB,Zuo, YH,et al. Fabrication of 1.55-mu m si-based resonant cavity enhanced photodetectors using sol-gel bonding[J]. Ieee photonics technology letters,2004,16(8):1930-1932.
APA Mao, RW.,Li, CB.,Zuo, YH.,Cheng, BW.,Teng, XG.,...&Wang, QM.(2004).Fabrication of 1.55-mu m si-based resonant cavity enhanced photodetectors using sol-gel bonding.Ieee photonics technology letters,16(8),1930-1932.
MLA Mao, RW,et al."Fabrication of 1.55-mu m si-based resonant cavity enhanced photodetectors using sol-gel bonding".Ieee photonics technology letters 16.8(2004):1930-1932.

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来源:半导体研究所

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