Thermal annealing effect on inas/ingaas quantum dots grown by atomic layer molecular beam epitaxy
文献类型：期刊论文
| 作者 | Shi, GX; Jin, P; Xu, B; Li, CM; Cui, CX; Wang, YL; Ye, XL; Wu, J; Wang, ZG |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-09-01 |
| 卷号 | 269期号:2-4页码:181-186 |
| 关键词 | Photoluminescence Molecular beam epitaxy Quantum dots Semiconductor iii-v material Laser device |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2004.05.058 |
| 通讯作者 | Shi, gx(gxshi@red.semi.ac.cn) |
| 英文摘要 | The effect of rapid thermal annealing on the inas quantum dots (qds) grown by atomic layer molecular beam epitaxy and capped with ingaas layer has been investigated using transmission electron microscopy and photoluminescence (pl). different from the previously reported results, no obvious blueshift of the pl emission of qds is observed until the annealing temperature increases up to 800 degreesc. the size and shape of the qds annealed at 750 degreesc have hardly changed indicating the relatively weak ga/in interdiffusion, which is characterized by little blueshift of the pl peak of qds. the qd size increases largely and a few large clusters can be observed after 800 degreesc rta, implying the fast interdiffusion and the formation of ingaas qds. these results indicate that the delay of the blueshift of the pl peak of qds is correlated with the abnormal interdiffusion process, which can be explained by two possible reasons: the reduction of excess-as-induced defects and the redistribution of in, ga atoms around the inas qds resulted from the sub-monolayer deposition of ingaas capping layer. (c) 2004 elsevier b.v. all rights reserved. |
| WOS关键词 | MIGRATION-ENHANCED EPITAXY ; GAAS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000223813300001 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426195 |
| 专题 | 半导体研究所 |
| 通讯作者 | Shi, GX |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shi, GX,Jin, P,Xu, B,et al. Thermal annealing effect on inas/ingaas quantum dots grown by atomic layer molecular beam epitaxy[J]. Journal of crystal growth,2004,269(2-4):181-186. |
| APA | Shi, GX.,Jin, P.,Xu, B.,Li, CM.,Cui, CX.,...&Wang, ZG.(2004).Thermal annealing effect on inas/ingaas quantum dots grown by atomic layer molecular beam epitaxy.Journal of crystal growth,269(2-4),181-186. |
| MLA | Shi, GX,et al."Thermal annealing effect on inas/ingaas quantum dots grown by atomic layer molecular beam epitaxy".Journal of crystal growth 269.2-4(2004):181-186. |
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来源：半导体研究所
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