Gallium antisite defect and residual acceptors in undoped gasb
文献类型：期刊论文
| 作者 | Hu, WG; Wang, Z; Su, BF; Dai, YQ; Wang, SJ; Zhao, YW |
| 刊名 | Physics letters a
 |
| 出版日期 | 2004-11-15 |
| 卷号 | 332期号:3-4页码:286-290 |
| 关键词 | Gasb Coincidence doppler broadening Positron annihilation Defect |
| ISSN号 | 0375-9601 |
| DOI | 10.1016/j.physleta.2004.09.056 |
| 通讯作者 | Wang, z(wangz@whu.edu.cn) |
| 英文摘要 | Undoped ga(sb) samples were investigated by positron lifetime spectroscopy (pas) and the coincident doppler broadening (cdb) technique. pas measurement indicated that there were monovacancy-type defects in undoped ga(sb) samples, which were identified to be predominantly ca vacancy (v(ga)) related defects by combining the cdb measurements. after annealing of these samples at 520 c, positron shallow trapping have been observed and should be due to ga(sb) defects. undoped ga(sb) is intrinsically p-type having a residual carrier density of 10(16)-10(17) cm(-3). and the ga(sb) antisite defects are stable in the (0), (1-) and (2-) charge states and act as a double acceptor. thus, we infer that ga(sb) antisite defects are the acceptor contributing to the p-type conduction for undoped samples. (c) 2004 elsevier b.v all rights reserved. |
| WOS关键词 | POSITRON-ANNIHILATION ; NATIVE DEFECTS ; VACANCIES ; PHOTOLUMINESCENCE ; SEMICONDUCTORS ; ANTIMONIDE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000225044500017 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426197 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, Z |
| 作者单位 | 1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 2.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hu, WG,Wang, Z,Su, BF,et al. Gallium antisite defect and residual acceptors in undoped gasb[J]. Physics letters a,2004,332(3-4):286-290. |
| APA | Hu, WG,Wang, Z,Su, BF,Dai, YQ,Wang, SJ,&Zhao, YW.(2004).Gallium antisite defect and residual acceptors in undoped gasb.Physics letters a,332(3-4),286-290. |
| MLA | Hu, WG,et al."Gallium antisite defect and residual acceptors in undoped gasb".Physics letters a 332.3-4(2004):286-290. |
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来源：半导体研究所
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