Inas nanostructure grown with different growth rate in inalas matrix on inp (001) substrate
文献类型：期刊论文
| 作者 | Zhao, FA; Wu, J; Jin, P; Xu, B; Wang, ZG; Zhang, CL |
| 刊名 | Physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2004-06-01 |
| 卷号 | 23期号:1-2页码:31-35 |
| 关键词 | Inas Inalas/inp Quantum dots Quantum wires Polarized photoluminescence |
| ISSN号 | 1386-9477 |
| DOI | 10.1016/j.physe.2003.11.276 |
| 通讯作者 | Zhao, fa(zhaofa@red.semi.ac.cn) |
| 英文摘要 | Inas self-organized nanostructures in in0.52al0.48as matrix have been grown on inp (001) substrates by molecular beam epitaxy. the morphologies of the nanostructures are found to be strongly dependent on the growth rate of the inas layer. by increasing the growth rate from 0.005 to 0.35 ml/s, the morphology of the nanostructure changes from wire to elongated dot and then changes back to wire again. polarized photoluminescence of the inas quantum wires and quantum dots are performed at 77 k, which are characterized by strong optical anisotropies. (c) 2003 elsevier b.v. all rights reserved. |
| WOS关键词 | ISLAND FORMATION ; BEAM EPITAXY ; PHOTOLUMINESCENCE ; SHAPE ; DOTS |
| WOS研究方向 | Science & Technology - Other Topics ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000222073300005 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426198 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, FA |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, FA,Wu, J,Jin, P,et al. Inas nanostructure grown with different growth rate in inalas matrix on inp (001) substrate[J]. Physica e-low-dimensional systems & nanostructures,2004,23(1-2):31-35. |
| APA | Zhao, FA,Wu, J,Jin, P,Xu, B,Wang, ZG,&Zhang, CL.(2004).Inas nanostructure grown with different growth rate in inalas matrix on inp (001) substrate.Physica e-low-dimensional systems & nanostructures,23(1-2),31-35. |
| MLA | Zhao, FA,et al."Inas nanostructure grown with different growth rate in inalas matrix on inp (001) substrate".Physica e-low-dimensional systems & nanostructures 23.1-2(2004):31-35. |
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来源：半导体研究所
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