Effect of the inalas and ingaas combination strain-reducing layer on 1.3 mu m emission self-assembled inas/gaas quantum dots
文献类型：期刊论文
| 作者 | Fang, ZD; Gong, Z; Miao, ZH; Kong, LM; Xu, XH; Ni, HQ; Niu, ZC |
| 刊名 | Journal of physics d-applied physics
 |
| 出版日期 | 2004-04-07 |
| 卷号 | 37期号:7页码:1012-1016 |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/0022-3727/37/7/010 |
| 通讯作者 | Fang, zd(zdfang@red.semi.ac.cn) |
| 英文摘要 | Self-assembled inas quantum dots (qds) with differing deposition thicknesses covered by inxal1-xas (x = 0.2, 0.3) and in0.2ga0.8as combination strain-reducing layers (csrls) were grown by molecular beam epitaxy. their structural and optical properties were investigated by atomic force microscopy and photoluminescence spectroscopy, respectively. the emission peak position of inas qds capped by csrl can reach 1.34 mum at room temperature with a relatively larger energy splitting of 93 mev between the ground and first excited states. |
| WOS关键词 | PHOTOLUMINESCENCE ; LASER ; TEMPERATURE ; WAVELENGTH ; SEPARATION ; ISLANDS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000221109800010 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426201 |
| 专题 | 半导体研究所 |
| 通讯作者 | Fang, ZD |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fang, ZD,Gong, Z,Miao, ZH,et al. Effect of the inalas and ingaas combination strain-reducing layer on 1.3 mu m emission self-assembled inas/gaas quantum dots[J]. Journal of physics d-applied physics,2004,37(7):1012-1016. |
| APA | Fang, ZD.,Gong, Z.,Miao, ZH.,Kong, LM.,Xu, XH.,...&Niu, ZC.(2004).Effect of the inalas and ingaas combination strain-reducing layer on 1.3 mu m emission self-assembled inas/gaas quantum dots.Journal of physics d-applied physics,37(7),1012-1016. |
| MLA | Fang, ZD,et al."Effect of the inalas and ingaas combination strain-reducing layer on 1.3 mu m emission self-assembled inas/gaas quantum dots".Journal of physics d-applied physics 37.7(2004):1012-1016. |
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来源：半导体研究所
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