Effects of sb, n, and period on the electronic properties of gaas/gainnassb superlattices
文献类型：期刊论文
| 作者 | Ni, HQ; Xu, XH; Wei, Z; Xu, YQ; Niu, ZC; Wu, RH |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2004-05-01 |
| 卷号 | 53期号:5页码:1474-1482 |
| 关键词 | Superlattice Electronic structure Pseudopotential |
| ISSN号 | 1000-3290 |
| 通讯作者 | Ni, hq() |
| 英文摘要 | We have calculated the bond distributions and atom positions of gaas/galnnassb superlattices using keating's semiempirical valence force field (vff) model and monte carlo simulation. the electronic structures of the superlattices are calculated using folded spectrum method (fsm) combined with an empirical pseudopotential (ep) proposed by williamson et al.. the effects of n and sb on superlattice energy levels are discussed. we find that the deterioration of the optical properties induced by n can be explained by the localization of the conduction-band states around the n atom. the electron and hole effective masses of the superlattices are calculated and compared with the effective masses of the bulk gaas and gainas. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; QUANTUM-WELLS ; CHEMICAL TRENDS ; MU-M ; SEMICONDUCTORS ; LASERS ; ALLOYS ; PSEUDOPOTENTIALS ; ENERGY ; DOTS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000221226100038 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426202 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ni, HQ |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ni, HQ,Xu, XH,Wei, Z,et al. Effects of sb, n, and period on the electronic properties of gaas/gainnassb superlattices[J]. Acta physica sinica,2004,53(5):1474-1482. |
| APA | Ni, HQ,Xu, XH,Wei, Z,Xu, YQ,Niu, ZC,&Wu, RH.(2004).Effects of sb, n, and period on the electronic properties of gaas/gainnassb superlattices.Acta physica sinica,53(5),1474-1482. |
| MLA | Ni, HQ,et al."Effects of sb, n, and period on the electronic properties of gaas/gainnassb superlattices".Acta physica sinica 53.5(2004):1474-1482. |
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来源：半导体研究所
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