Formation of gallium nitride crystal loops on silicon (111) substrate
文献类型:期刊论文
作者 | Wang, XM; Sun, ZC; Wei, QQ; Wang, Q; Cao, WT; Xue, CS |
刊名 | Rare metal materials and engineering
![]() |
出版日期 | 2004-11-01 |
卷号 | 33期号:11页码:1161-1164 |
关键词 | Hot-wall chemical vapor deposition Gan Five half-loops |
ISSN号 | 1002-185X |
通讯作者 | Wang, xm() |
英文摘要 | The crystal loops of gallium nitride (gan) were deposited on silicon (111) substrate by using hot-wall chemical vapor deposition and thermal treatment. scanning electron microscopy (sem), selected area electron diffraction (saed), x-ray diffraction (xrd), photoluminescence (pl) and fourier transform infrared transmission (ftir) spectroscopy were employed to analyze the surface morphology, structure and optical properties of gan layer. sem image shows five half-loops attached to a crystal string side by side in the uniform films. xrd, saed patterns reveal that the formed loops are polycrystalline hexagonal gallium nitride. ftir pattern shows the main composition of the film is gan and it contains trifle carbon contamination. new feature is found in pl pattern of the crystal loops, which is different from the bulk gan films. |
WOS关键词 | GAN FILMS ; EPITAXY |
WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
语种 | 英语 |
WOS记录号 | WOS:000225582400010 |
出版者 | NORTHWEST INST NONFERROUS METAL RESEARCH |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426204 |
专题 | 半导体研究所 |
通讯作者 | Wang, XM |
作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, XM,Sun, ZC,Wei, QQ,et al. Formation of gallium nitride crystal loops on silicon (111) substrate[J]. Rare metal materials and engineering,2004,33(11):1161-1164. |
APA | Wang, XM,Sun, ZC,Wei, QQ,Wang, Q,Cao, WT,&Xue, CS.(2004).Formation of gallium nitride crystal loops on silicon (111) substrate.Rare metal materials and engineering,33(11),1161-1164. |
MLA | Wang, XM,et al."Formation of gallium nitride crystal loops on silicon (111) substrate".Rare metal materials and engineering 33.11(2004):1161-1164. |
入库方式: iSwitch采集
来源:半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。