中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Formation of gallium nitride crystal loops on silicon (111) substrate

文献类型:期刊论文

作者Wang, XM; Sun, ZC; Wei, QQ; Wang, Q; Cao, WT; Xue, CS
刊名Rare metal materials and engineering
出版日期2004-11-01
卷号33期号:11页码:1161-1164
关键词Hot-wall chemical vapor deposition Gan Five half-loops
ISSN号1002-185X
通讯作者Wang, xm()
英文摘要The crystal loops of gallium nitride (gan) were deposited on silicon (111) substrate by using hot-wall chemical vapor deposition and thermal treatment. scanning electron microscopy (sem), selected area electron diffraction (saed), x-ray diffraction (xrd), photoluminescence (pl) and fourier transform infrared transmission (ftir) spectroscopy were employed to analyze the surface morphology, structure and optical properties of gan layer. sem image shows five half-loops attached to a crystal string side by side in the uniform films. xrd, saed patterns reveal that the formed loops are polycrystalline hexagonal gallium nitride. ftir pattern shows the main composition of the film is gan and it contains trifle carbon contamination. new feature is found in pl pattern of the crystal loops, which is different from the bulk gan films.
WOS关键词GAN FILMS ; EPITAXY
WOS研究方向Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000225582400010
出版者NORTHWEST INST NONFERROUS METAL RESEARCH
URI标识http://www.irgrid.ac.cn/handle/1471x/2426204
专题半导体研究所
通讯作者Wang, XM
作者单位Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式
GB/T 7714
Wang, XM,Sun, ZC,Wei, QQ,et al. Formation of gallium nitride crystal loops on silicon (111) substrate[J]. Rare metal materials and engineering,2004,33(11):1161-1164.
APA Wang, XM,Sun, ZC,Wei, QQ,Wang, Q,Cao, WT,&Xue, CS.(2004).Formation of gallium nitride crystal loops on silicon (111) substrate.Rare metal materials and engineering,33(11),1161-1164.
MLA Wang, XM,et al."Formation of gallium nitride crystal loops on silicon (111) substrate".Rare metal materials and engineering 33.11(2004):1161-1164.

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来源:半导体研究所

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