Liquid phase epitaxy of al0.3ga0.7as islands
文献类型：期刊论文
| 作者 | Sun, J; Hu, LZ; Sun, YC; Wang, ZY; Zhang, HZ |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-09-15 |
| 卷号 | 270期号:1-2页码:38-41 |
| 关键词 | Crystal morphology Liquid phase epitaxy Alloys Semiconducting ternary compounds |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2004.06.012 |
| 通讯作者 | Sun, j(albertjefferson@sohu.com) |
| 英文摘要 | Self-organized al0.3ga0.7as islands generated on the (100) facet are achieved by liquid phase epitaxy. three particularly designed experimental conditions-partial oxidation, deficient solute and air quenching-result in defect-free nucleation. micron-sized frustums and pyramids are observed by a scanning electron microscope. the sharp end of the tip has a radius of curvature less than 50 nm. it is proposed that such al0.3ga0.7as islands may be potentially serviceable in microscale and nanoscale fabrication and related spheres. (c) 2004 elsevier b.v. all rights reserved. |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000224134900006 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426219 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun, J |
| 作者单位 | 1.Chinese Acad Sci, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Dalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion Electron Be, Dalian 116023, Liaoning Prov, Peoples R China 3.Shandong Univ, Dept Foreign Languages, Weihai, Shandong Prov, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, J,Hu, LZ,Sun, YC,et al. Liquid phase epitaxy of al0.3ga0.7as islands[J]. Journal of crystal growth,2004,270(1-2):38-41. |
| APA | Sun, J,Hu, LZ,Sun, YC,Wang, ZY,&Zhang, HZ.(2004).Liquid phase epitaxy of al0.3ga0.7as islands.Journal of crystal growth,270(1-2),38-41. |
| MLA | Sun, J,et al."Liquid phase epitaxy of al0.3ga0.7as islands".Journal of crystal growth 270.1-2(2004):38-41. |
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来源：半导体研究所
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