Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes
文献类型:期刊论文
作者 | Zhang, XX; Zeng, YP; Wang, XG; Wang, BQ; Zhu, ZP |
刊名 | Chinese physics
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出版日期 | 2004-09-01 |
卷号 | 13期号:9页码:1560-1563 |
关键词 | Resonant tunnelling diode Photoluminescence Negative differential resistance Integrated luminescence intensity |
ISSN号 | 1009-1963 |
通讯作者 | Zhang, xx(xxzhang@red.semi.ac.cn) |
英文摘要 | Resonant tunnelling diodes with different structures were grown. their photoluminescence spectra were investigated. by contrast, the luminescence in the quantum well is separated from that of other epilayers. the result is obtained that the exciton of the luminescence in the quantum well is partly come from the cap layer in the experiment. so the photoluminescence spectrum is closely related to the electron transport in the resonant tunnelling diode structure. this offers a method by which the important performance of resonant tunnelling diode could be forecast by analysing the integrated photoluminescence intensities. |
WOS关键词 | COUPLED QUANTUM-WELLS |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
WOS记录号 | WOS:000223650300034 |
出版者 | CHINESE PHYSICAL SOC |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426225 |
专题 | 半导体研究所 |
通讯作者 | Zhang, XX |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Key Lab Infrared Phys, Shanghai 200083, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, XX,Zeng, YP,Wang, XG,et al. Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes[J]. Chinese physics,2004,13(9):1560-1563. |
APA | Zhang, XX,Zeng, YP,Wang, XG,Wang, BQ,&Zhu, ZP.(2004).Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes.Chinese physics,13(9),1560-1563. |
MLA | Zhang, XX,et al."Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes".Chinese physics 13.9(2004):1560-1563. |
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来源:半导体研究所
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