中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes

文献类型:期刊论文

作者Zhang, XX; Zeng, YP; Wang, XG; Wang, BQ; Zhu, ZP
刊名Chinese physics
出版日期2004-09-01
卷号13期号:9页码:1560-1563
关键词Resonant tunnelling diode Photoluminescence Negative differential resistance Integrated luminescence intensity
ISSN号1009-1963
通讯作者Zhang, xx(xxzhang@red.semi.ac.cn)
英文摘要Resonant tunnelling diodes with different structures were grown. their photoluminescence spectra were investigated. by contrast, the luminescence in the quantum well is separated from that of other epilayers. the result is obtained that the exciton of the luminescence in the quantum well is partly come from the cap layer in the experiment. so the photoluminescence spectrum is closely related to the electron transport in the resonant tunnelling diode structure. this offers a method by which the important performance of resonant tunnelling diode could be forecast by analysing the integrated photoluminescence intensities.
WOS关键词COUPLED QUANTUM-WELLS
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000223650300034
出版者CHINESE PHYSICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2426225
专题半导体研究所
通讯作者Zhang, XX
作者单位1.Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Key Lab Infrared Phys, Shanghai 200083, Peoples R China
推荐引用方式
GB/T 7714
Zhang, XX,Zeng, YP,Wang, XG,et al. Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes[J]. Chinese physics,2004,13(9):1560-1563.
APA Zhang, XX,Zeng, YP,Wang, XG,Wang, BQ,&Zhu, ZP.(2004).Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes.Chinese physics,13(9),1560-1563.
MLA Zhang, XX,et al."Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes".Chinese physics 13.9(2004):1560-1563.

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来源:半导体研究所

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