Optical characteristics of inas quantum dots capped with short period gaas/inas superlattices and ingaas combination layers
文献类型：期刊论文
| 作者 | Gong, Z; Fang, ZD; Xu, XH; Miao, ZH; Niu, ZC; Feng, SL |
| 刊名 | Solid state communications
 |
| 出版日期 | 2004-11-01 |
| 卷号 | 132期号:6页码:421-424 |
| 关键词 | Quantum dot Superlattice Molecular beam epitaxy Photoluminescence |
| ISSN号 | 0038-1098 |
| DOI | 10.1016/j.ssc.2004.03.046 |
| 通讯作者 | Gong, z(zhgong@red.semi.ac.cn) |
| 英文摘要 | Long wavelength light emission was realized by capping inas quantum dots (qds) with short period gaas/inas superlattices (sls) and an ingaas strain-reducing layer (srl). the optical properties were systematically investigated by photoluminescence tests. with increasing the periods of sls, the emission wavelength of inas qds shifts from 1.27 to 1.53 mum. we explain the redshift as a result of the increased qd height with the sls and the reduced strain in the dot caused by ingaas srl. (c) 2004 published by elsevier ltd. |
| WOS关键词 | 1.3 MU-M ; ROOM-TEMPERATURE ; SEPARATION ; EMISSION ; ISLANDS ; LASERS ; INALAS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000224622300014 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426229 |
| 专题 | 半导体研究所 |
| 通讯作者 | Gong, Z |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gong, Z,Fang, ZD,Xu, XH,et al. Optical characteristics of inas quantum dots capped with short period gaas/inas superlattices and ingaas combination layers[J]. Solid state communications,2004,132(6):421-424. |
| APA | Gong, Z,Fang, ZD,Xu, XH,Miao, ZH,Niu, ZC,&Feng, SL.(2004).Optical characteristics of inas quantum dots capped with short period gaas/inas superlattices and ingaas combination layers.Solid state communications,132(6),421-424. |
| MLA | Gong, Z,et al."Optical characteristics of inas quantum dots capped with short period gaas/inas superlattices and ingaas combination layers".Solid state communications 132.6(2004):421-424. |
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来源：半导体研究所
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