中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optical characteristics of inas quantum dots capped with short period gaas/inas superlattices and ingaas combination layers

文献类型:期刊论文

作者Gong, Z; Fang, ZD; Xu, XH; Miao, ZH; Niu, ZC; Feng, SL
刊名Solid state communications
出版日期2004-11-01
卷号132期号:6页码:421-424
关键词Quantum dot Superlattice Molecular beam epitaxy Photoluminescence
ISSN号0038-1098
DOI10.1016/j.ssc.2004.03.046
通讯作者Gong, z(zhgong@red.semi.ac.cn)
英文摘要Long wavelength light emission was realized by capping inas quantum dots (qds) with short period gaas/inas superlattices (sls) and an ingaas strain-reducing layer (srl). the optical properties were systematically investigated by photoluminescence tests. with increasing the periods of sls, the emission wavelength of inas qds shifts from 1.27 to 1.53 mum. we explain the redshift as a result of the increased qd height with the sls and the reduced strain in the dot caused by ingaas srl. (c) 2004 published by elsevier ltd.
WOS关键词1.3 MU-M ; ROOM-TEMPERATURE ; SEPARATION ; EMISSION ; ISLANDS ; LASERS ; INALAS
WOS研究方向Physics
WOS类目Physics, Condensed Matter
语种英语
WOS记录号WOS:000224622300014
出版者PERGAMON-ELSEVIER SCIENCE LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2426229
专题半导体研究所
通讯作者Gong, Z
作者单位Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
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Gong, Z,Fang, ZD,Xu, XH,et al. Optical characteristics of inas quantum dots capped with short period gaas/inas superlattices and ingaas combination layers[J]. Solid state communications,2004,132(6):421-424.
APA Gong, Z,Fang, ZD,Xu, XH,Miao, ZH,Niu, ZC,&Feng, SL.(2004).Optical characteristics of inas quantum dots capped with short period gaas/inas superlattices and ingaas combination layers.Solid state communications,132(6),421-424.
MLA Gong, Z,et al."Optical characteristics of inas quantum dots capped with short period gaas/inas superlattices and ingaas combination layers".Solid state communications 132.6(2004):421-424.

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来源:半导体研究所

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