Detailed model and investigation of gain saturation and carrier spatial hole burning for a semiconductor optical amplifier with gain clamping by a vertical laser field
文献类型:期刊论文
作者 | Jin, CY; Huang, YZ; Yu, LJ; Deng, SL |
刊名 | Ieee journal of quantum electronics
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出版日期 | 2004-05-01 |
卷号 | 40期号:5页码:513-518 |
关键词 | Gain clamping Linear optical amplifier (loa) Noise figure Rate equations Semiconductor optical amplifier (soa) |
ISSN号 | 0018-9197 |
DOI | 10.1109/jqe.2004.826427 |
通讯作者 | Jin, cy() |
英文摘要 | A detailed model for semiconductor linear optical amplifiers (loas) with gain clamping by a vertical laser field is presented, which accounts the carrier and photon density distribution in the longitudinal direction as well as the facet reflectivity. the photon iterative method is used in the simulation with output amplified spontaneous emission spectrum in the wide band as iterative variables. the gain saturation behaviors and the noise figure are numerically simulated, and the variation of longitudinal carrier density with the input power is presented which is associated with the on-off state of the vertical lasers. the results show that the loa can have a gain spectrum clamped in a wide wavelength range and have almost the same value of noise figure as that of conventional semiconductor optical amplifiers (soas). numerical results also show that an loa can have a noise figure about 2 db less than that of the soa gain clamped by a distributed bragg reflector laser. |
WOS研究方向 | Engineering ; Optics ; Physics |
WOS类目 | Engineering, Electrical & Electronic ; Optics ; Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000221090900011 |
出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426232 |
专题 | 半导体研究所 |
通讯作者 | Jin, CY |
作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Jin, CY,Huang, YZ,Yu, LJ,et al. Detailed model and investigation of gain saturation and carrier spatial hole burning for a semiconductor optical amplifier with gain clamping by a vertical laser field[J]. Ieee journal of quantum electronics,2004,40(5):513-518. |
APA | Jin, CY,Huang, YZ,Yu, LJ,&Deng, SL.(2004).Detailed model and investigation of gain saturation and carrier spatial hole burning for a semiconductor optical amplifier with gain clamping by a vertical laser field.Ieee journal of quantum electronics,40(5),513-518. |
MLA | Jin, CY,et al."Detailed model and investigation of gain saturation and carrier spatial hole burning for a semiconductor optical amplifier with gain clamping by a vertical laser field".Ieee journal of quantum electronics 40.5(2004):513-518. |
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来源:半导体研究所
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