中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Detailed model and investigation of gain saturation and carrier spatial hole burning for a semiconductor optical amplifier with gain clamping by a vertical laser field

文献类型:期刊论文

作者Jin, CY; Huang, YZ; Yu, LJ; Deng, SL
刊名Ieee journal of quantum electronics
出版日期2004-05-01
卷号40期号:5页码:513-518
关键词Gain clamping Linear optical amplifier (loa) Noise figure Rate equations Semiconductor optical amplifier (soa)
ISSN号0018-9197
DOI10.1109/jqe.2004.826427
通讯作者Jin, cy()
英文摘要A detailed model for semiconductor linear optical amplifiers (loas) with gain clamping by a vertical laser field is presented, which accounts the carrier and photon density distribution in the longitudinal direction as well as the facet reflectivity. the photon iterative method is used in the simulation with output amplified spontaneous emission spectrum in the wide band as iterative variables. the gain saturation behaviors and the noise figure are numerically simulated, and the variation of longitudinal carrier density with the input power is presented which is associated with the on-off state of the vertical lasers. the results show that the loa can have a gain spectrum clamped in a wide wavelength range and have almost the same value of noise figure as that of conventional semiconductor optical amplifiers (soas). numerical results also show that an loa can have a noise figure about 2 db less than that of the soa gain clamped by a distributed bragg reflector laser.
WOS研究方向Engineering ; Optics ; Physics
WOS类目Engineering, Electrical & Electronic ; Optics ; Physics, Applied
语种英语
WOS记录号WOS:000221090900011
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
URI标识http://www.irgrid.ac.cn/handle/1471x/2426232
专题半导体研究所
通讯作者Jin, CY
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
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Jin, CY,Huang, YZ,Yu, LJ,et al. Detailed model and investigation of gain saturation and carrier spatial hole burning for a semiconductor optical amplifier with gain clamping by a vertical laser field[J]. Ieee journal of quantum electronics,2004,40(5):513-518.
APA Jin, CY,Huang, YZ,Yu, LJ,&Deng, SL.(2004).Detailed model and investigation of gain saturation and carrier spatial hole burning for a semiconductor optical amplifier with gain clamping by a vertical laser field.Ieee journal of quantum electronics,40(5),513-518.
MLA Jin, CY,et al."Detailed model and investigation of gain saturation and carrier spatial hole burning for a semiconductor optical amplifier with gain clamping by a vertical laser field".Ieee journal of quantum electronics 40.5(2004):513-518.

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来源:半导体研究所

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