Influence of nitrogen annealing on electrical properties of lead zirconate titanate thin film deposited on titanium metal foil
文献类型：期刊论文
| 作者 | Zhang, GQ; Zou, Q; Sun, P; Mei, X; Ruda, HE |
| 刊名 | Materials letters
 |
| 出版日期 | 2004-02-01 |
| 卷号 | 58期号:5页码:706-710 |
| 关键词 | Ferroelectrics Electrical properties Heat treatment Nitrogen annealing Dielectric constant Leakage current |
| ISSN号 | 0167-577X |
| DOI | 10.1016/j.matlet.2003.06.009 |
| 通讯作者 | Zou, q() |
| 英文摘要 | We report on improved electrical properties of lead zirconate titanate (pzt) film deposited on titanium metal foil using nitrogen annealing. after nitrogen annealing of the pzt capacitors, symmetric capacitance-voltage (c-v) characteristics, higher dielectric constant and breakdown field, less change of dielectric constant with frequency, lower dielectric loss and leakage current are obtained. (c) 2003 elsevier b.v. all rights reserved. |
| WOS关键词 | DIELECTRIC-PROPERTIES ; MEMORY DEVICE ; CAPACITORS ; PZT ; DEGRADATION ; INTERFACE ; ELECTRODE ; STORAGE |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000188216300031 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426234 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zou, Q |
| 作者单位 | 1.Univ Toronto, Ctr Adv Nanotechnol, Toronto, ON M5S 3E4, Canada 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, GQ,Zou, Q,Sun, P,et al. Influence of nitrogen annealing on electrical properties of lead zirconate titanate thin film deposited on titanium metal foil[J]. Materials letters,2004,58(5):706-710. |
| APA | Zhang, GQ,Zou, Q,Sun, P,Mei, X,&Ruda, HE.(2004).Influence of nitrogen annealing on electrical properties of lead zirconate titanate thin film deposited on titanium metal foil.Materials letters,58(5),706-710. |
| MLA | Zhang, GQ,et al."Influence of nitrogen annealing on electrical properties of lead zirconate titanate thin film deposited on titanium metal foil".Materials letters 58.5(2004):706-710. |
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来源：半导体研究所
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