Synthesis and thermal stability of zn3n2 powder
文献类型：期刊论文
| 作者 | Zong, FJ; Ma, HL; Xue, CS; Zhuang, HZ; Zhang, XJ; Xiao, HD; Ma, J; Ji, F |
| 刊名 | Solid state communications
 |
| 出版日期 | 2004-11-01 |
| 卷号 | 132期号:8页码:521-525 |
| 关键词 | Semiconductor zn3n2 powders Nitridation method synthesis Crystal structure and symmetry Thermal stability |
| ISSN号 | 0038-1098 |
| DOI | 10.1016/j.ssc.2004.09.011 |
| 通讯作者 | Zong, fj(fjzong@sdu.edu.cn) |
| 英文摘要 | This paper reports that zn3n2 powder of high quality has been synthesized by a nitridation reaction of zn powder with nh3 gas (flow rate 500 ml/min) at the nitridation temperature of 600 degreesc for 120 min. x-ray diffraction indicates that zn3n2 is cubic in structure with the lattice constant being a=9.788 angstrom. x-ray photoelectron spectroscopy shows the differences of chemical bonding states between zn3n2 and zno, and confirms the formation of n-zn bonds. thermal gravimetric analysis and differential thermal analysis are employed to investigate the thermal decomposition behavior of zn3n2 powder. it is found that zn3n2 is unstable when exposed to open air above 500 degreesc. (c) 2004 elsevier ltd. all right reserved. |
| WOS关键词 | THIN-FILMS ; OPTICAL-PROPERTIES ; ZINC-OXIDE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000224867600005 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426235 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zong, FJ |
| 作者单位 | 1.Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China 2.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zong, FJ,Ma, HL,Xue, CS,et al. Synthesis and thermal stability of zn3n2 powder[J]. Solid state communications,2004,132(8):521-525. |
| APA | Zong, FJ.,Ma, HL.,Xue, CS.,Zhuang, HZ.,Zhang, XJ.,...&Ji, F.(2004).Synthesis and thermal stability of zn3n2 powder.Solid state communications,132(8),521-525. |
| MLA | Zong, FJ,et al."Synthesis and thermal stability of zn3n2 powder".Solid state communications 132.8(2004):521-525. |
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来源：半导体研究所
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