Mn implanted gaas by low energy ion beam deposition
文献类型：期刊论文
| 作者 | Song, SL; Chen, NF; Zhou, JP; Yin, ZG; Li, YL; Yang, SY; Liu, ZK |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-03-15 |
| 卷号 | 264期号:1-3页码:31-35 |
| 关键词 | X-ray diffraction Ion beam deposit Magnetic materials Semiconducting gallium arsenide |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2003.12.039 |
| 通讯作者 | Song, sl(slsong@red.semi.ac.cn) |
| 英文摘要 | High dose mn was implanted into semi-insulating gaas substrate to fabricate embedded ferromagnetic mn-ga binary particles by mass-analyzed dual ion beam deposit system at room temperature. the properties of as-implanted and annealed samples were measured with x-ray diffraction, high-resolution x-ray diffraction to characterize the structural changes. new phase formed after high temperature annealing. sample surface image was observed with atomic force microscopy. all the samples showed ferromagnetic behaviour at room temperature. there were some differences between the hysteresis loops of as-implanted and annealed samples as well as the cluster size of the latter was much larger than that of the former through the surface morphology. (c) 2004 elsevier b.v. all rights reserved. |
| WOS关键词 | CURIE-TEMPERATURE ; SEMICONDUCTORS ; FERROMAGNETISM ; SYSTEM ; MN)AS ; (GA ; GAN |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000220345400007 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426236 |
| 专题 | 半导体研究所 |
| 通讯作者 | Song, SL |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Mech, Natl Micro Gav Lab, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Song, SL,Chen, NF,Zhou, JP,et al. Mn implanted gaas by low energy ion beam deposition[J]. Journal of crystal growth,2004,264(1-3):31-35. |
| APA | Song, SL.,Chen, NF.,Zhou, JP.,Yin, ZG.,Li, YL.,...&Liu, ZK.(2004).Mn implanted gaas by low energy ion beam deposition.Journal of crystal growth,264(1-3),31-35. |
| MLA | Song, SL,et al."Mn implanted gaas by low energy ion beam deposition".Journal of crystal growth 264.1-3(2004):31-35. |
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来源：半导体研究所
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