Photoluminescence characteristics of gaassbn/gaas epilayers lattice-matched to gaas substrates
文献类型：期刊论文
| 作者 | Bian, LF; Jiang, DS; Tan, PH; Lu, SL; Sun, BQ; Li, LH; Harmand, JC |
| 刊名 | Solid state communications
 |
| 出版日期 | 2004-12-01 |
| 卷号 | 132期号:10页码:707-711 |
| 关键词 | Gaassbn epilayer Pl spectra Rta |
| ISSN号 | 0038-1098 |
| DOI | 10.1016/j.ssc.2004.09.016 |
| 通讯作者 | Bian, lf(lfbian@pdi-berlin.de) |
| 英文摘要 | The photoluminescence (pl) characteristics of gaassbn/gaas epilayers grown by molecular beam epitaxy (mbe) are carefully investigated. the results show that antimony (sb) incorporation into ganas material has less influence on the n-induced localization states. for the same n concentration, gaassbn material can reach an emission wavelength near 1.3 mum more easily than gainnas material. the rapid thermal annealing (rta) experiment shows that the annealing induced rearrangement of atoms and related blueshift in gaassbn epilayers are smaller than those in ganas and gainnas epilayers. the gaassbn material can keep a longer emission wavelength near 1.3 mum-emission even after the annealing treatment. raman spectroscopy analysis gives further insight into the structure stability of gaassbn material after annealing. (c) 2004 elsevier ltd. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; GAINNAS/GAAS QUANTUM-WELLS ; 1.3 MU-M ; TEMPERATURE-DEPENDENCE ; CARRIER LOCALIZATION ; LASER-DIODES ; LUMINESCENCE ; ALLOYS ; MECHANISM ; GAINASN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000225166600012 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426238 |
| 专题 | 半导体研究所 |
| 通讯作者 | Bian, LF |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.CNRS, LPN, F-91460 Marcoussis, France |
| 推荐引用方式 GB/T 7714 | Bian, LF,Jiang, DS,Tan, PH,et al. Photoluminescence characteristics of gaassbn/gaas epilayers lattice-matched to gaas substrates[J]. Solid state communications,2004,132(10):707-711. |
| APA | Bian, LF.,Jiang, DS.,Tan, PH.,Lu, SL.,Sun, BQ.,...&Harmand, JC.(2004).Photoluminescence characteristics of gaassbn/gaas epilayers lattice-matched to gaas substrates.Solid state communications,132(10),707-711. |
| MLA | Bian, LF,et al."Photoluminescence characteristics of gaassbn/gaas epilayers lattice-matched to gaas substrates".Solid state communications 132.10(2004):707-711. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。