Magneto - transport of electron symmetric and antisymmrtric states in highly doped ingaas/inalas single quantum well
文献类型：期刊论文
| 作者 | Qiu, ZJ; Gui, YS; Cui, LJ; Zeng, YP; Huang, ZM; Shu, XZ; Dai, N; Guo, SL; Chu, JH |
| 刊名 | Journal of infrared and millimeter waves
 |
| 出版日期 | 2004-10-01 |
| 卷号 | 23期号:5页码:329-332 |
| 关键词 | Ingaas/inalas quantum well Magneto-transport Symmetric state Antisymmetric state |
| ISSN号 | 1001-9014 |
| 通讯作者 | Qiu, zj() |
| 英文摘要 | Beating patterns in longitudinal resistance caused by the symmetric and antisymmetric states were observed in a heavily doped ingaas/inalas quantum well by using variable temperature hall measurement. the energy gap of symmetric and antisymmetric states is estimated to be 4mev from the analysis of beating node positions. in addition, the temperature dependences of the subband electron mobility and concentration were also studied from the mobility spectrum and multicarrier fitting procedure. |
| WOS关键词 | TRANSISTOR |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000224767500003 |
| 出版者 | SCIENCE CHINA PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426239 |
| 专题 | 半导体研究所 |
| 通讯作者 | Qiu, ZJ |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Qiu, ZJ,Gui, YS,Cui, LJ,et al. Magneto - transport of electron symmetric and antisymmrtric states in highly doped ingaas/inalas single quantum well[J]. Journal of infrared and millimeter waves,2004,23(5):329-332. |
| APA | Qiu, ZJ.,Gui, YS.,Cui, LJ.,Zeng, YP.,Huang, ZM.,...&Chu, JH.(2004).Magneto - transport of electron symmetric and antisymmrtric states in highly doped ingaas/inalas single quantum well.Journal of infrared and millimeter waves,23(5),329-332. |
| MLA | Qiu, ZJ,et al."Magneto - transport of electron symmetric and antisymmrtric states in highly doped ingaas/inalas single quantum well".Journal of infrared and millimeter waves 23.5(2004):329-332. |
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来源：半导体研究所
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