The magnetic and structure properties of room-temperature ferromagnetic semiconductor (ga,mn)n
文献类型：期刊论文
| 作者 | Zhang, FQ; Chen, NF; Liu, XL; Liu, ZK; Yang, SY; Chai, CL |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-02-15 |
| 卷号 | 262期号:1-4页码:287-289 |
| 关键词 | X-ray diffraction Ion beam deposition Gan/al2o3 Ferromagnetic materials |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.200310.031 |
| 通讯作者 | Zhang, fq(fqzh@red.semi.ac.cn) |
| 英文摘要 | Diluted magnetic semiconductor (ga,mn)n were prepared by the implantation of mn ions into gan/al2o3 substrate. clear x-ray diffraction peak from (ga,mn)n is observed. it indicates that the solid solution (ga,mn)n phase was formed with the same lattice structure as gan and different lattice constant. magnetic hysteresis-loops of the (ga,mn)n were obtained at room temperature (293 k) with the coercivity of about 2496.97 a m(-1). (c) 2003 elsevier b.v. all rights reserved. |
| WOS关键词 | IMPLANTED GAN ; INJECTION |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000189098700043 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426241 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, FQ |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Mech, Natl Micrograv Lab, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, FQ,Chen, NF,Liu, XL,et al. The magnetic and structure properties of room-temperature ferromagnetic semiconductor (ga,mn)n[J]. Journal of crystal growth,2004,262(1-4):287-289. |
| APA | Zhang, FQ,Chen, NF,Liu, XL,Liu, ZK,Yang, SY,&Chai, CL.(2004).The magnetic and structure properties of room-temperature ferromagnetic semiconductor (ga,mn)n.Journal of crystal growth,262(1-4),287-289. |
| MLA | Zhang, FQ,et al."The magnetic and structure properties of room-temperature ferromagnetic semiconductor (ga,mn)n".Journal of crystal growth 262.1-4(2004):287-289. |
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来源：半导体研究所
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