Broadband polarization-insensitive semiconductor optical amplifier gate with tensile ingaas quasi-bulk and compressively strained ingaas wells
文献类型：期刊论文
| 作者 | Wang, SR; Zhu, HL; Wang, BJ; Liu, ZH; Ding, Y; Zhao, LJ; Zhou, F; Wang, W |
| 刊名 | Optical engineering
 |
| 出版日期 | 2004-09-01 |
| 卷号 | 43期号:9页码:1955-1956 |
| 关键词 | Semiconductor optical amplifier Wideband polarization insensitive Tensile strained quasi-bulk ingaas Compressively strained quantum wells Extinction ratio Lossless operation current |
| ISSN号 | 0091-3286 |
| DOI | 10.1117/1.1777587 |
| 通讯作者 | Wang, sr(shrw@red.semi.ac.cn) |
| 英文摘要 | A novel wideband polarization-insensitive semiconductor optical amplifier (soa) gate containing compressively strained ingaas quantum wells and tensile-strained ingaas quasi-bulk layers is developed. the fabricated soa gates have a wide 3-db optical bandwidth of 102 nm, less than 0.8-db polarization sensitivity, more than 50-db extinction ratio, and less than 75-ma fiber-to-fiber lossless operating current. (c) 2004 society of photo-optical instrumentation engineers. |
| WOS关键词 | SOA GATE ; MU-M |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000223968100003 |
| 出版者 | SPIE-INT SOCIETY OPTICAL ENGINEERING |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426242 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, SR |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China 2.Yunnan Normal Univ, Inst Solar Energy, Kunming 650092, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, SR,Zhu, HL,Wang, BJ,et al. Broadband polarization-insensitive semiconductor optical amplifier gate with tensile ingaas quasi-bulk and compressively strained ingaas wells[J]. Optical engineering,2004,43(9):1955-1956. |
| APA | Wang, SR.,Zhu, HL.,Wang, BJ.,Liu, ZH.,Ding, Y.,...&Wang, W.(2004).Broadband polarization-insensitive semiconductor optical amplifier gate with tensile ingaas quasi-bulk and compressively strained ingaas wells.Optical engineering,43(9),1955-1956. |
| MLA | Wang, SR,et al."Broadband polarization-insensitive semiconductor optical amplifier gate with tensile ingaas quasi-bulk and compressively strained ingaas wells".Optical engineering 43.9(2004):1955-1956. |
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来源：半导体研究所
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