中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Study on the perfection of in situ p-injection synthesis lec-inp single crystals

文献类型:期刊论文

作者Zhou, XL; Zhao, YW; Sun, NF; Yang, GY; Xu, YQ; Sun, TN
刊名Journal of crystal growth
出版日期2004-03-15
卷号264期号:1-3页码:17-20
关键词Etch-pit density Phosphorus-rich Pl-mapping Indium phosphide
ISSN号0022-0248
DOI10.1016/j.jcrysgro.2003.12.042
通讯作者Zhou, xl(tnsun@heinfo.net)
英文摘要Undoped, s-doped and fe-doped inp crystals with diameter up to 4-inch have been pulled in drop 10 0 drop -direction under p-rich condition by a rapid p-injection in situ synthesis liquid encapsulated czochralski (lec) method. high speed photoluminescence mapping, etch-pit density (epd) mapping and scanning electron microscopy have been used to characterize the samples of the single crystal ingots. dislocations and electrical homogeneity of these samples are investigated and compared. by controlling the thermal field and the solid-liquid interface shape, 4-inch low-epd inp single crystals have been successfully grown by the rapid p-injection synthesis lec method. the epd across the wafer of the ingots is less than 5 x 10(4) cm(-2). cluster defects with a pore center are observed in the p-rich lec grown inp ingots. these defects are distributed irregularly on a wafer and are surrounded by a high concentration of dislocations. the uniformity of the pl intensity across the wafer is influenced by these defects. (c) 2004 elsevier b.v. all rights reserved.
WOS关键词GROWTH
WOS研究方向Crystallography ; Materials Science ; Physics
WOS类目Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000220345400004
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2426250
专题半导体研究所
通讯作者Zhou, XL
作者单位1.Hebei Semicond Res Inst, Hebei 050051, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Zhou, XL,Zhao, YW,Sun, NF,et al. Study on the perfection of in situ p-injection synthesis lec-inp single crystals[J]. Journal of crystal growth,2004,264(1-3):17-20.
APA Zhou, XL,Zhao, YW,Sun, NF,Yang, GY,Xu, YQ,&Sun, TN.(2004).Study on the perfection of in situ p-injection synthesis lec-inp single crystals.Journal of crystal growth,264(1-3),17-20.
MLA Zhou, XL,et al."Study on the perfection of in situ p-injection synthesis lec-inp single crystals".Journal of crystal growth 264.1-3(2004):17-20.

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来源:半导体研究所

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