A study of the degree of relaxation of algan epilayers on gan template
文献类型：期刊论文
| 作者 | Zhang, JC; Wu, MF; Wang, JF; Liu, JP; Wang, YT; Chen, J; Jin, RQ; Yang, H |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-10-01 |
| 卷号 | 270期号:3-4页码:289-294 |
| 关键词 | High resolution x-ray diffraction Rutherford backscattering/channeling Metalorganic chemical vapor deposition Nitrides Semiconducting gallium compounds |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2004.06.028 |
| 通讯作者 | Zhang, jc(jczhang@red.semi.ac.cn) |
| 英文摘要 | The strain state of 570nm alxga1-xn layers grown on 600nm gan template by metal organic chemical vapor deposition was studied using rutherford backscattering (rbs)/channeling and triple-axis x-ray diffraction measurements. the results showed that the degree of relaxation (r) of alxga1-xn layers increased almost linearly when x less than or equal to 0.42 and reached to 70% when x = 0.42. above 0.42, the value of r varied slowly and ai(x)ga(1-x)n layers almost full relaxed when x = 1 (ain). in this work the underlying gan layer was in compressive strain, which resulted in the reduction of lattice misfit between gan and alxga1-xn, and a 570nm alxga1-xn layer with the composition of about 0.16 might be grown on gan coherently from the extrapolation. the different shape of (0004) diffraction peak was discussed to be related to the relaxation. (c) 2004 elsevier b.v. all rights reserved. |
| WOS关键词 | PHASE-SEPARATION ; HETEROSTRUCTURES ; INTERLAYER |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000224290100001 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426252 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, JC |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Peking Univ, Dept Tech Phys, Beijing 100871, Peoples R China 3.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, JC,Wu, MF,Wang, JF,et al. A study of the degree of relaxation of algan epilayers on gan template[J]. Journal of crystal growth,2004,270(3-4):289-294. |
| APA | Zhang, JC.,Wu, MF.,Wang, JF.,Liu, JP.,Wang, YT.,...&Yang, H.(2004).A study of the degree of relaxation of algan epilayers on gan template.Journal of crystal growth,270(3-4),289-294. |
| MLA | Zhang, JC,et al."A study of the degree of relaxation of algan epilayers on gan template".Journal of crystal growth 270.3-4(2004):289-294. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。