Investigation of mn-implanted n-type ge
文献类型：期刊论文
| 作者 | Liu, LF; Chen, NF; Yin, ZG; Yang, F; Zhou, JP; Zhang, FQ |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-05-01 |
| 卷号 | 265期号:3-4页码:466-470 |
| 关键词 | Auger electron spectroscopy X-ray diffraction Ion implantation Semiconducting germanium |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2004.02.007 |
| 通讯作者 | Liu, lf(lfliu@red.semi.ac.cn) |
| 英文摘要 | Mn+ irons were implanted to n-type ge(1 1 1) single crystal at room temperature with an energy of 100 kev and a dose of 3 x 10(16) cm(-2). subsequently annealing was performed at 400degreesc for 1 h under flowing nitrogen gas. x-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is restored after annealing. polycrystalline germanium is formed in annealed sample. there are no new phases found except germanium. the samples surface morphologies indicate that annealed sample has island-like feature while there is no such kind of characteristic in as-implanted sample. the elemental composition of annealed sample was analyzed by auger electron spectroscopy. it shows that manganese ions are deeply implanted into germanium substrate and the highest manganese atomic concentration is 8% at the depth of 120 nm. the magnetic properties of samples were investigated by an alternating gradient magnetometer. the annealed sample shows ferromagnetic behavior at room temperature. (c) 2004 elsevier b.v. all rights reserved. |
| WOS关键词 | SEMICONDUCTOR ; FERROMAGNETISM |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000221205100017 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426255 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, LF |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Mech, Natl Lab Micrograv, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, LF,Chen, NF,Yin, ZG,et al. Investigation of mn-implanted n-type ge[J]. Journal of crystal growth,2004,265(3-4):466-470. |
| APA | Liu, LF,Chen, NF,Yin, ZG,Yang, F,Zhou, JP,&Zhang, FQ.(2004).Investigation of mn-implanted n-type ge.Journal of crystal growth,265(3-4),466-470. |
| MLA | Liu, LF,et al."Investigation of mn-implanted n-type ge".Journal of crystal growth 265.3-4(2004):466-470. |
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来源：半导体研究所
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