中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of rapid thermal annealing on inas/inalas/inp quantum wires with different inas deposited thickness

文献类型:期刊论文

作者Lei, W; Chen, YH; Wang, YL; Xu, B; Ye, XL; Zeng, YP; Wang, ZG
刊名Journal of crystal growth
出版日期2005-10-15
卷号284期号:1-2页码:20-27
关键词Annealing Dislocations Photoluminescence Molecular beam epitaxy Quantum wires Semiconducting iii-v material
ISSN号0022-0248
DOI10.1016/j.jcrysgro.2005.06.050
通讯作者Lei, w(ahleiwen@red.semi.ac.cn)
英文摘要We have studied the effect of the post-growth rapid thermal annealing on optical and electrical properties of inas/inalas/inp quantum wires with various inas deposited thickness. quite different annealing behaviors in photoluminescence and dark resistance are observed, which can be attributed to dislocations in samples. after annealing at 800 degrees c, quantum wires still exist in the sample with two monolayer inas deposited thickness, but the temperature-dependent pl properties are changed greatly due to the intermixing of in/al atoms. (c) 2005 elsevier b.v. all rights reserved.
WOS关键词MOLECULAR-BEAM EPITAXY ; OPTICAL-PROPERTIES ; SURFACE-MORPHOLOGY ; INP SUBSTRATE ; DOTS ; PHOTOLUMINESCENCE ; INP(001) ; TEMPERATURE ; ISLANDS ; STRAIN
WOS研究方向Crystallography ; Materials Science ; Physics
WOS类目Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种英语
WOS记录号WOS:000232387900004
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2426265
专题半导体研究所
通讯作者Lei, W
作者单位Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Lei, W,Chen, YH,Wang, YL,et al. Influence of rapid thermal annealing on inas/inalas/inp quantum wires with different inas deposited thickness[J]. Journal of crystal growth,2005,284(1-2):20-27.
APA Lei, W.,Chen, YH.,Wang, YL.,Xu, B.,Ye, XL.,...&Wang, ZG.(2005).Influence of rapid thermal annealing on inas/inalas/inp quantum wires with different inas deposited thickness.Journal of crystal growth,284(1-2),20-27.
MLA Lei, W,et al."Influence of rapid thermal annealing on inas/inalas/inp quantum wires with different inas deposited thickness".Journal of crystal growth 284.1-2(2005):20-27.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。