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Chinese Academy of Sciences Institutional Repositories Grid
A novel method for positioning of inas islands on gaas(110)

文献类型:期刊论文

作者Cui, CX; Chen, YH; Zhang, CL; Jin, P; Shi, GX; Zhao, C; Xu, B; Wang, ZG
刊名Physica e-low-dimensional systems & nanostructures
出版日期2005-09-01
卷号28期号:4页码:537-544
关键词Inas island Gaas (110) Cleaved edge overgrowth Ingaas/gaas superlattice Mbe
ISSN号1386-9477
DOI10.1016/j.physe.2005.06.001
通讯作者Chen, yh()
英文摘要A novel method for positioning of inas islands on gaas (110) by cleaved edge overgrowth is reported. the first growth sample contains strained inxga1-xas/gaas superlattice (sl) of varying indium fraction, which acts as a strain nanopattern for the cleaved-edge overgrowth. atoms incident on the cleaved edge will preferentially migrate to ingaas regions where favorable bonding sites are available. by this method inas island chains with lateral periodicity defined by the thickness of ingaas and gaas of sl have been realized by molecular beam epitaxy (mbe). they are observed by means of atomic force microscopy (afm). the strain nanopattern's effect is studied by the different indium fraction of sl and mbe growth conditions. (c) 2005 elsevier b.v. all rights reserved.
WOS关键词INAS/GAAS(110) HETEROEPITAXY ; QUANTUM DOTS ; SURFACE ; GROWTH ; GAAS
WOS研究方向Science & Technology - Other Topics ; Physics
WOS类目Nanoscience & Nanotechnology ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000232038500028
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2426267
专题半导体研究所
通讯作者Chen, YH
作者单位Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Cui, CX,Chen, YH,Zhang, CL,et al. A novel method for positioning of inas islands on gaas(110)[J]. Physica e-low-dimensional systems & nanostructures,2005,28(4):537-544.
APA Cui, CX.,Chen, YH.,Zhang, CL.,Jin, P.,Shi, GX.,...&Wang, ZG.(2005).A novel method for positioning of inas islands on gaas(110).Physica e-low-dimensional systems & nanostructures,28(4),537-544.
MLA Cui, CX,et al."A novel method for positioning of inas islands on gaas(110)".Physica e-low-dimensional systems & nanostructures 28.4(2005):537-544.

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来源:半导体研究所

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