中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Two-step synthesis of one-dimensional single crystalline gan nanowires

文献类型:期刊论文

作者Yang, L; Zhang, X; Huang, R; Zhang, GY; Xue, CS
刊名Physica e-low-dimensional systems & nanostructures
出版日期2005
卷号25期号:4页码:582-586
关键词Ga2o3 thin films Gan nanowires Magnetron sputtering Nitriding
ISSN号1386-9477
DOI10.1016/j.physe.2004.09.003
通讯作者Yang, l(yangl@ime.pku.edu.cn)
英文摘要Straight and smooth gan nanowires were synthesized on quartz substrates through the direct reaction of ga2o3 thin films with flowing ammonia in a horizontal oven without using a template or catalyst. x-ray diffraction (xrd), scanning electron microscopy (sem), energy-dispersive x-ray (edx), transmission electron microscopy (tem) and photoluminescence (pl) were used to characterize the samples. the straight and smooth cylindrical nanostructures are high quality single crystalline hexagonal wurtzite gan nanowires with diameters ranging from 5 to 30 nrn and lengths up to 20 mum. the near-band-edge emission peak located at 367 nm was observed at room temperature. (c) 2004 elsevier b.v. all rights reserved.
WOS关键词GROWTH ; BLUE
WOS研究方向Science & Technology - Other Topics ; Physics
WOS类目Nanoscience & Nanotechnology ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000226187900036
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2426274
专题半导体研究所
通讯作者Yang, L
作者单位1.Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
2.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式
GB/T 7714
Yang, L,Zhang, X,Huang, R,et al. Two-step synthesis of one-dimensional single crystalline gan nanowires[J]. Physica e-low-dimensional systems & nanostructures,2005,25(4):582-586.
APA Yang, L,Zhang, X,Huang, R,Zhang, GY,&Xue, CS.(2005).Two-step synthesis of one-dimensional single crystalline gan nanowires.Physica e-low-dimensional systems & nanostructures,25(4),582-586.
MLA Yang, L,et al."Two-step synthesis of one-dimensional single crystalline gan nanowires".Physica e-low-dimensional systems & nanostructures 25.4(2005):582-586.

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来源:半导体研究所

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