Formation of gaas/algaas and ingaas/gaas nanorings by droplet molecular-beam epitaxy
文献类型：期刊论文
| 作者 | Gong, Z; Niu, ZC; Huang, SS; Fang, ZD; Sun, BQ; Xia, JB |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2005-08-29 |
| 卷号 | 87期号:9页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2037193 |
| 通讯作者 | Niu, zc(zcniu@red.semi.ac.cn) |
| 英文摘要 | Gaas/algaas lattice-matched nanorings are formed on gaas (100) substrates by droplet epitaxy. the crucial step in the formation of nanorings is annealing ga droplets under as flux for proper time. the observed morphologic evolution of ga droplets during annealing does not support the hypothesis that as atoms preferentially react with ga around the periphery of the droplets, but somehow relates to a dewetting process similar to that of unstable films. photoluminescene (pl) test results confirm the quantum-confinement effect of these gaas nanorings. using similar methods, we have fabricated ingaas/gaas lattice-mismatched rings. (c) 2005 american institute of physics. |
| WOS关键词 | THIN POLYMER-FILMS ; QUANTUM RINGS ; LIQUID-FILMS ; PATTERN-FORMATION ; FABRICATION ; DOTS ; SEGREGATION ; INSTABILITY ; GAAS(001) ; ISLANDS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000231503700062 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426276 |
| 专题 | 半导体研究所 |
| 通讯作者 | Niu, ZC |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gong, Z,Niu, ZC,Huang, SS,et al. Formation of gaas/algaas and ingaas/gaas nanorings by droplet molecular-beam epitaxy[J]. Applied physics letters,2005,87(9):3. |
| APA | Gong, Z,Niu, ZC,Huang, SS,Fang, ZD,Sun, BQ,&Xia, JB.(2005).Formation of gaas/algaas and ingaas/gaas nanorings by droplet molecular-beam epitaxy.Applied physics letters,87(9),3. |
| MLA | Gong, Z,et al."Formation of gaas/algaas and ingaas/gaas nanorings by droplet molecular-beam epitaxy".Applied physics letters 87.9(2005):3. |
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来源：半导体研究所
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