1.3 mu m inas/gaas self-assembled quantum dots grown on in0.2ga0.8as-gaas combined strain-buffer layer
文献类型：期刊论文
| 作者 | Fang, ZD; Gong, Z; Miao, ZH; Niu, ZC; Shen, GD |
| 刊名 | Journal of infrared and millimeter waves
 |
| 出版日期 | 2005-10-01 |
| 卷号 | 24期号:5页码:324-327 |
| 关键词 | Inas/gaas quantum dots Combined strain-buffer layer Photoluminescence Atomic force microscopy |
| ISSN号 | 1001-9014 |
| 通讯作者 | Fang, zd() |
| 英文摘要 | Optical properties and surface structures of inas/caas self-assembled quantum dots (qds) grown on 2 nm in-0.2 ga0.8as and x ml gaas combined strain-buffer layer were investigated systematically by photoluminescence ( pl) and atomic force microscopy (afm). the qd density increased from similar to 1.7 x 10(9) cm(-2) to similar to 3.8 x 10(9) cm(-1) due to the decreasing of the lattice mismatch. the combined layer was of benefit to increasing in incorporated into dots and the average height-to-width ratios, which resulted in the red-shift of the emission peaks. for the sample of x = 10 ml, the ground state transition is shifted to 1350 nm at room temperature. |
| WOS关键词 | OPTICAL-PROPERTIES ; WELL |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000232904300002 |
| 出版者 | SCIENCE PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426286 |
| 专题 | 半导体研究所 |
| 通讯作者 | Fang, ZD |
| 作者单位 | 1.Beijing Polytech Univ, Optoelect Technol Lab, Beijing 100022, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fang, ZD,Gong, Z,Miao, ZH,et al. 1.3 mu m inas/gaas self-assembled quantum dots grown on in0.2ga0.8as-gaas combined strain-buffer layer[J]. Journal of infrared and millimeter waves,2005,24(5):324-327. |
| APA | Fang, ZD,Gong, Z,Miao, ZH,Niu, ZC,&Shen, GD.(2005).1.3 mu m inas/gaas self-assembled quantum dots grown on in0.2ga0.8as-gaas combined strain-buffer layer.Journal of infrared and millimeter waves,24(5),324-327. |
| MLA | Fang, ZD,et al."1.3 mu m inas/gaas self-assembled quantum dots grown on in0.2ga0.8as-gaas combined strain-buffer layer".Journal of infrared and millimeter waves 24.5(2005):324-327. |
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来源：半导体研究所
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